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Inchange Semiconductor |
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BDW36
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 180V(Min)
·High Switching Speed
·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 10A
APPLICATIONS
·Designed for use in industrial-military power amplifier and
switching circuit applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
180 V
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
180 V
7V
IC Collector Current-Continuous
30 A
ICM Collector Current-Peak
50 A
IB Base Current-Continuous
10 A
PC Collector Power Dissipation @TC=25℃ 250
W
TJ Junction Temperature
200 ℃
Tstg Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
0.875 ℃/W
isc website:www.iscsemi.cn
1
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BDW36
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 30A; IB= 6A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 10A; IB= 1A
VBE(on) Base-Emitter On Voltage
IC= 10A; VCE= 4V
ICEO Collector Cutoff Current
VCE= 90V; IB= 0
ICBO Collector Cutoff Current
VCB=180V; IE= 0
IEBO Emitter Cutoff Current
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 8A; VCE= 4V
hFE-2
DC Current Gain
IC= 30A; VCE= 4V
fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V
MIN MAX UNIT
150 V
1.0 V
3.0 V
1.8 V
1.8 V
50 μA
10 μA
0.1 mA
20 100
5
1 MHz
isc website:www.iscsemi.cn
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