파트넘버.co.kr KTD1047B 데이터시트 PDF


KTD1047B 반도체 회로 부품 판매점

TRIPLE DIFFUSED NPN TRANSISTOR



KEC 로고
KEC
KTD1047B 데이터시트, 핀배열, 회로
SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Complementary to KTB817B.
Recommended for 60W Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
RATING
160
140
6
12
15
100
150
-55 150
UNIT
V
V
V
A
W
KTD1047B
TRIPLE DIFFUSED NPN TRANSISTOR
A
NQ
O
D
E
d
PP
123
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
B
K
DIM MILLIMETERS
A 15.60 +_ 0.20
B 4.80 +_ 0.20
C 19.90 +_ 0.20
D 2.00 +_ 0.20
d 1.00 +_ 0.20
E 3.00 +_ 0.20
F 3.80 +_ 0.20
G 3.50 +_ 0.20
H 13.90 +_ 0.20
I 12.76 +_ 0.20
J 23.40 +_ 0.20
M K 1.5+0.15-0.05
L 16.50 +_ 0.30
M 1.40 +_ 0.20
T N 13.60 +_ 0.20
O 9.60 +_ 0.20
P 5.45 +_ 0.30
Q 3.20 +_ 0.10
R 18.70 +_ 0.20
T 0.60+0.15-0.05
TO-3P(N)-E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
DC Current Gain
hFE (1) (Note)
hFE 2
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Voltage
VBE(ON)
Transition Frequency
fT
Output Capacitance
Cob
Turn On Time
ton
Fall Time
tf
Storage Time
tstg
Note : hFE(1) Classification O:60 120, Y:100 200
TEST CONDITION
VCB=80V, IE=0
VEB=4V, IC=0
VCE=5V, IC=1A
VCE=5V, IC=6A
IC=5A, IB=0.5A
VCE=5V, IC=1A
VCE=5V, IC=1A
VCB=10V, IE=0, f=1MHz
VCC=20V
IC=1A=10
RL=20
IB1=-10
IB2
MIN.
-
-
60
20
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
15
210
0.26
0.68
6.88
MAX.
0.1
0.1
200
2.5
1.5
-
-
-
-
-
UNIT
mA
mA
V
V
MHz
pF
S
2011. 3. 18
Revision No : 0
1/3


KTD1047B 데이터시트, 핀배열, 회로
KTD1047B
I C - VCE
10 240mA
200mA
160mA
8
120mA
80mA
6
40mA
4
20mA
2
I B =0
0
0 10 20 30 40 50
COLLECTOR EMITTER VOLTAGE VCE (V)
1k
500
300
100
50
30
10
5
3
1
0.1
h FE - IC
VCE =5V
0.3 1 3 10 30
COLLECTOR CURRENT IC (A)
100
10
5
3
1
0.5
0.3
0.1
0.05
0.03
0.01
0.1
VCE(sat) - I C
IC /IB =10
0.3 0.5 1
35
COLLECTOR CURRENT I C (A)
10
VBE(sat) - I C
10
IC /IB =10
5
3
1
0.5
0.3
0.1
0.1
0.3 0.5 1
35
COLLECTOR CURRENT I C (A)
10
IC - VBE
8
VCE =5V
7
6
5
4
3
2
1
0
0 0.4 0.8 1.2 1.6
BASE-EMITTER VOLTAGE VBE (V)
2011. 3. 18
Revision No : 0
100
50
30
10
5
3
1
0.1
fT - IC
VCE =5V
0.3 0.5 1
35
COLLECTOR CURRENT I C (A)
10
2/3




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KTD1047B transistor

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