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KTB1366 반도체 회로 부품 판매점

TRIPLE DIFFUSED PNP TRANSISTOR



KEC 로고
KEC
KTB1366 데이터시트, 핀배열, 회로
SEMICONDUCTOR
TECHNICAL DATA
KTB1366
TRIPLE DIFFUSED PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES
Low Collector Saturation Voltage
: VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A.
Collector Power Dissipation
: PC=25W (Tc=25 )
Complementary to KTD2058.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
VCBO
VCEO
VEBO
IC
IB
Collector Power
Dissipation
Ta=25
Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
-60
-60
-7
-3
-0.5
2
25
150
-55 150
UNIT
V
V
V
A
A
W
A
S
E
LL
M
DD
NN
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2
F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05
J 13.6 +_ 0.5
R K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_ 0.1
P 6.8+_ 0.1
Q 4.5 +_ 0.2
R 2.6 +_0.2
HS
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
ICBO
IEBO
V(BR)CEO
DC Current Gain
hFE(1) (Note)
hFE(2)
Collector Emitter Saturation Voltage
VCE(sat)
Base-Emitter Voltage
VBE
Transition Frequency
fT
Collector Output Capacitance
Cob
Turn-on Time
ton
Switching
Time
Storage Time
tstg
Fall Time
tf
Note : hFE(1) Classification O:60 120, Y:100 200
TEST CONDITION
VCB=-60V, IE=0
VEB=-7V, IC=0
IC=-50mA, IB=0
VCE=-5V, IC=-0.5A
VCE=-5V, IC=-3A
IC=-2A, IB=-0.2A
VCE=-5V, IC=-0.5A
VCE=-5V, IC=-0.5A
VCB=-10V, IE=0, f=1MHz
0 IB2
INPUT
IB1
20µsec
-IB1=IB2=0.2A
DUTY CYCLE <= 1%
IB1
IB2
OUTPUT
15
VCC =-30V
MIN.
-
-
-60
60
20
-
-
-
-
TYP.
-
-
-
-
-
-0.25
-0.7
9
150
MAX. UNIT
-100 A
-100 A
-V
200
-
-1.0 V
-1.0 V
- MHz
- pF
- 0.4 -
- 1.7 -
S
- 0.5 -
2007. 5. 21
Revision No : 4
1/2


KTB1366 데이터시트, 핀배열, 회로
KTB1366
I C - VCE
-4
COMMON
EMITTER
-3
-80 -70
-60 Tc=25 C
-50
-40
-30
-2 -20
IB =-10mA
-1
0
0
-1 -2 -3 -4 -5 -6
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - I C
-1
COMMON EMITTER
-0.5 IC /IB=10
-0.3
-0.1
-0.05
Tc=100 C
Tc=25 C
Tc=-25 C
-0.02
-0.02
-0.1 -0.3 -1
-3 -5
COLLECTOR CURRENT IC (A)
h FE - I C
1k
500
Tc=100 C
300
Tc=25 C
COMMON EMITTER
VCE =-5V
Tc=-25 C
100
50
20
-0.02
-0.1 -0.3 -1
COLLECTOR CURRENT IC (A)
-3
R th(t) - t
1k
(1) WITHOUT HEAT SINK
(2) INFINITE HEAT SINK
100
(1) Ta=25 C
10
(2) Tc=25 C
1
0.1
-3 -2 -1
10 10 10
1
10
TIME t (sec)
2
10
2007. 5. 21
Revision No : 4
SAFE OPERATING AREA
-10
I C MAX.(PULSED) *
-5
-3 I C MAX.(CONTINUOUS)
*
**
*
-1
* SINGLE NONREPETITIVE
-0.5 PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
-0.2
-1 -3 -10
-30
-100
COLLECTOR-EMITTER VOLTAGE VCE (V)
2/2




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