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KEC |
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
1W (Mounted on Ceramic Substrate).
Small Flat Package.
Complementary to KTD1898.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IE
PC
PC*
Tj
Storage Temperature Range
Tstg
* Mounted on ceramic substrate(250mm2 0.8t)
RATING
-80
-80
-5
-1
1
500
1
150
-55 150
UNIT
V
V
V
A
A
mW
W
KTB1260
EPITAXIAL PLANAR PNP TRANSISTOR
AC
H
G
DD
K
FF
1 23
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
2.50 +_0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50+_ 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
Marking
hFE Rank
Lot No.
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO
VCB=-60V, IE=0
Emitter Cut-off Current
IEBO VEB=-4V, IC=0
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-1mA, IB=0
DC Current Gain
hFE(Note) VCE=-3V, IC=-100mA
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-500mA, IB=-50mA
Transition Frequency
fT VCE=-5V, IC=-50mA, f=30MHz
Collector Output Capacitance
Cob VCB=-10V, IE=0, f=1MHz
Note : hFE Classification O:70 140, Y:120 240, GR:200 400
MIN.
-
-
-80
70
-
-
-
TYP.
-
-
-
-
-
100
25
MAX.
-1
-1
-
400
-0.4
-
-
UNIT
A
A
V
V
MHz
pF
2003. 12. 12
Revision No : 2
1/3
KTB1260
I C - VBE
-1K
Ta=25 C
VCE =-5V
-100
-10
-1
-0.1
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
BASE-EMITTER VOLTAGE VBE (V)
I C - VCE
-1.0
-0.8
-0.6
-0.4
-0.2
0
0
Ta=25 C
-0.45mA
-0.4mA
-0.35mA
-0.3mA
-0.25mA
-0.2mA
-0.15mA
-0.1mA
-0.05mA
IB =0mA
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - IC
1K
500
200
VCE =-3V
100
50
VCE =-1V
20
10
-1 -2 -5 -10 -20 -50 -100 -200 -500 -1K -2K
COLLECTOR CURRENT I C (mA)
VCE(sat) - IC
Ta=25 C
-2
-1
-0.5
-0.2
-0.1
-0.05
IC /IB =20
IC /IB =10
-0.02
-0.01
-1 -2
-5 -10 -20 -50 -100 -200 -500 -1K -2K
COLLECTOR CURRENT I C (mA)
fT - IE
1K
Ta=25 C
500 VCE =-5V
200
100
50
20
10
5
2
1
12
5 10 20 50 100 200 500 1K
EMITTER CURRENT I C (mA)
2003. 12. 12
Revision No : 0
Cob - VCB
1K
Ta=25 C
500 f=1MHz
200 IE =0A
100
50
20
10
5
2
1
-0.1 -0.2
-0.5 -1
-2
-5 -10 -20 -50 -100
COLLECTOR-BASE VOLTAGE VCB (V)
2/3
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