파트넘버.co.kr KTB1260 데이터시트 PDF


KTB1260 반도체 회로 부품 판매점

EPITAXIAL PLANAR PNP TRANSISTOR



KEC 로고
KEC
KTB1260 데이터시트, 핀배열, 회로
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
1W (Mounted on Ceramic Substrate).
Small Flat Package.
Complementary to KTD1898.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IE
PC
PC*
Tj
Storage Temperature Range
Tstg
* Mounted on ceramic substrate(250mm2 0.8t)
RATING
-80
-80
-5
-1
1
500
1
150
-55 150
UNIT
V
V
V
A
A
mW
W
KTB1260
EPITAXIAL PLANAR PNP TRANSISTOR
AC
H
G
DD
K
FF
1 23
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
2.50 +_0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50+_ 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
Marking
hFE Rank
Lot No.
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO
VCB=-60V, IE=0
Emitter Cut-off Current
IEBO VEB=-4V, IC=0
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-1mA, IB=0
DC Current Gain
hFE(Note) VCE=-3V, IC=-100mA
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-500mA, IB=-50mA
Transition Frequency
fT VCE=-5V, IC=-50mA, f=30MHz
Collector Output Capacitance
Cob VCB=-10V, IE=0, f=1MHz
Note : hFE Classification O:70 140, Y:120 240, GR:200 400
MIN.
-
-
-80
70
-
-
-
TYP.
-
-
-
-
-
100
25
MAX.
-1
-1
-
400
-0.4
-
-
UNIT
A
A
V
V
MHz
pF
2003. 12. 12
Revision No : 2
1/3


KTB1260 데이터시트, 핀배열, 회로
KTB1260
I C - VBE
-1K
Ta=25 C
VCE =-5V
-100
-10
-1
-0.1
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
BASE-EMITTER VOLTAGE VBE (V)
I C - VCE
-1.0
-0.8
-0.6
-0.4
-0.2
0
0
Ta=25 C
-0.45mA
-0.4mA
-0.35mA
-0.3mA
-0.25mA
-0.2mA
-0.15mA
-0.1mA
-0.05mA
IB =0mA
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - IC
1K
500
200
VCE =-3V
100
50
VCE =-1V
20
10
-1 -2 -5 -10 -20 -50 -100 -200 -500 -1K -2K
COLLECTOR CURRENT I C (mA)
VCE(sat) - IC
Ta=25 C
-2
-1
-0.5
-0.2
-0.1
-0.05
IC /IB =20
IC /IB =10
-0.02
-0.01
-1 -2
-5 -10 -20 -50 -100 -200 -500 -1K -2K
COLLECTOR CURRENT I C (mA)
fT - IE
1K
Ta=25 C
500 VCE =-5V
200
100
50
20
10
5
2
1
12
5 10 20 50 100 200 500 1K
EMITTER CURRENT I C (mA)
2003. 12. 12
Revision No : 0
Cob - VCB
1K
Ta=25 C
500 f=1MHz
200 IE =0A
100
50
20
10
5
2
1
-0.1 -0.2
-0.5 -1
-2
-5 -10 -20 -50 -100
COLLECTOR-BASE VOLTAGE VCB (V)
2/3




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KTB1260 transistor

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KTB1260

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE) - KEC(Korea Electronics)



KTB1260

EPITAXIAL PLANAR PNP TRANSISTOR - KEC