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PDF KTB1241 Data sheet ( Hoja de datos )
| Número de pieza | KTB1241 | |
| Descripción | EPITAXIAL PLANAR PNP TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURE
ᴌHigh Breakdown Voltage and High Current
: VCEO=-80V, IC=-1A.
ᴌLow VCE(sat)
ᴌComplementary to KTD1863.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
RATING
-80
-80
-5
-1
1
1
150
-55ᴕ150
UNIT
V
V
V
A
A
W
ᴱ
ᴱ
KTB1241
EPITAXIAL PLANAR PNP TRANSISTOR
BD
P
DEPTH:0.2
C
Q
K
FF
HH
M EM
123
HL
NN
1. EMITTER
2. COLLECTOR
3. BASE
DIM MILLIMETERS
A 7.20 MAX
B 5.20 MAX
S C 0.60 MAX
D 2.50 MAX
E 1.15 MAX
F 1.27
G 1.70 MAX
H 0.55 MAX
J 14.00+_ 0.50
H
K
L
0.35 MIN
0.75+_ 0.10
M4
N 25
O 1.25
P Φ1.50
Q 0.10 MAX
R 12.50 +_ 0.50
S 1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter-Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
ICBO
IEBO
V(BR)CEO
hFE (Note)
VCE(sat)
fT
VCB=-60V, IE=0
VEB=-4V, IC=0
IC=-1mA, IB=0
VCE=-3V, IC=-100mA
IC=-500mA, IB=-50mA
VCE=-5V, IC=-50mA, f=30MHz
Collector Output Capacitance
Cob VCB=-10V, IE=0, f=1MHz
Note : hFE Classification O:70ᴕ140, Y:120ᴕ240, GR:200ᴕ400
MIN.
-
-
-80
70
-
-
-
TYP.
-
-
-
-
-
100
25
MAX.
-1
-1
-
400
-0.4
-
-
UNIT
ỌA
ỌA
V
V
MHz
pF
1998. 8. 21
Revision No : 1
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet KTB1241.PDF ] | |
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