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KEC |
SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE HIGH SPEED POWER SWITCH
APPLICATION.
Built-in Free wheeling Diode makes efficient anti saturation operation.
Suitable for half bridge light ballast Applications.
Low base drive requirement.
MJE13005DF
TRIPLE DIFFUSED NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
RATING
800
400
10
5
10
2
UNIT
V
V
V
A
A
PC 30 W
Tj 150
Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
ICBO
IEBO
V(BR)CBO
V(BR)EBO
hFE(1) (Note)
hFE(2)
VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
Collector Output Capacitance
Cob
Note : hFE Classification R : 18~27, O : 23~35
VCB=700, IE=0
VEB=9V, IC=0
IC=10mA, IE=0
IE=1mA, IC=0
VCE=5V, IC=1A
VCE=5V, IC=2A
IC=1A, IB=0.2A
IC=2A, IB=0.5A
IC=4A, IB=1A
IC=1A, IB=0.2A
IC=2A, IB=0.5A
VCB=10V, f=1MHz
2014. 2. 07
Revision No : 3
MIN.
-
-
800
10
18
8
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
65
MAX.
10
10
-
-
35
-
0.5
0.6
1
1.2
1.6
-
UNIT
A
A
V
V
pF
1/4
MJE13005DF
CHARACTERISTIC
Transition Frequency
Turn-On Time
SYMBOL
fT
TEST CONDITION
VCE=10V, IC=0.5A
ton
Storage Time
tstg
Fall Time
Diode Forward Voltage
*Reverse recovery tims (di/dt=10A/ S)
tf
VF
trr
*Pulse Test : Pulse Width = 5mS, Duty cycles 10%
IF=2A
IF=0.4A
IF=1A
IF=2A
MIN.
4
-
TYP.
-
-
MAX.
-
UNIT
MHz
0.15 S
--5 S
- - 0.8 S
- - 1.6 V
- 800 -
nS
- 1.4 -
S
- 1.9 -
S
2014. 2. 07
Revision No : 3
2/4
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