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KEC |
SEMICONDUCTOR
TECHNICAL DATA
POWER MANAGEMENT.
FEATURES
Including two devices in US6.
(Ultra Super mini type with 6 leads)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT (TOP VIEW)
65 4
MARKING 6 5 4
Q2
Type Name
BSQ1
Lot No.
12 3
123
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
KTX421U
EPITAXIAL PLANAR NPN TRANSISTOR
N CHANNEL MOS FIELD EFFECT TRANSISTOR
B
B1
1 6 DIM MILLIMETERS
A 2.00+_ 0.20
2 5 A1 1.3+_ 0.1
B 2.1+_ 0.1
3
4 D B1
1.25+_ 0.1
C 0.65
D 0.2+0.10/-0.05
G 0-0.1
H 0.9+_ 0.1
T T 0.15+0.1/-0.05
G
1. Q1 EMITTER
2. Q1 BASE
3. Q2 DRAIN
4. Q2 SOURCE
5. Q2 GATE
6. Q1 COLLECTOR
US6
Q1 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
ICP *
PC *
Tj
Tstg
* Single Pulse PW=1mS.
** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
RATING
15
12
6
500
1
150
150
-55 150
Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
VDS
VGSS
ID
PC **
Tch
Tstg
** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
RATING
30
20
100
150
150
-55 150
2008. 9. 23
Revision No : 1
UNIT
V
V
V
mA
A
mW
UNIT
V
V
mA
mW
1/6
KTX421U
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE
VCE(sat)
fT
VCB=15V, IE=0
VEB=6V, IC=0
IC=10 A
IC=1mA
IE=10 A
VCE=2V, IC=10mA
IC=200mA, IB=10mA
VCE=2V, IC=10mA, fT=100MHz
Collector Output Capacitance
Cob VCB=10V, IE=0, f=1MHz
MIN.
-
-
15
12
6
270
-
-
-
TYP.
-
-
-
-
-
-
90
320
7.5
MAX.
100
100
-
-
-
680
250
-
-
UNIT
nA
nA
V
V
V
-
mV
MHz
pF
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time
Turn-on Time
Turn-off Time
IGSS
V(BR)DSS
IDSS
Vth
|Yfs|
RDS(ON)
Ciss
Crss
Coss
ton
toff
TEST CONDITION
VGS= 20V, VDS=0V
ID=100 A, VGS=0V
VDS=30V, VGS=0V
VDS=3V, ID=0.1mA
VDS=3V, ID=10mA
ID=10mA, VGS=2.5V
VDS=3V, VGS=0V, f=1MHz
VDS=3V, VGS=0V, f=1MHz
VDS=3V, VGS=0V, f=1MHz
VDD=5V, ID=10mA, VGS=0 5V
MIN.
-
30
-
0.5
25
-
-
-
-
-
-
TYP.
-
-
-
-
-
4
8.5
3.3
9.3
50
160
MAX.
1
-
1
1.5
-
7
-
-
-
-
-
UNIT
A
V
A
V
mS
pF
pF
pF
nS
nS
2008. 9. 23
Revision No : 1
2/6
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