파트넘버.co.kr KTX421U 데이터시트 PDF


KTX421U 반도체 회로 부품 판매점

EPITAXIAL PLANAR NPN TRANSISTOR



KEC 로고
KEC
KTX421U 데이터시트, 핀배열, 회로
SEMICONDUCTOR
TECHNICAL DATA
POWER MANAGEMENT.
FEATURES
Including two devices in US6.
(Ultra Super mini type with 6 leads)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT (TOP VIEW)
65 4
MARKING 6 5 4
Q2
Type Name
BSQ1
Lot No.
12 3
123
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
KTX421U
EPITAXIAL PLANAR NPN TRANSISTOR
N CHANNEL MOS FIELD EFFECT TRANSISTOR
B
B1
1 6 DIM MILLIMETERS
A 2.00+_ 0.20
2 5 A1 1.3+_ 0.1
B 2.1+_ 0.1
3
4 D B1
1.25+_ 0.1
C 0.65
D 0.2+0.10/-0.05
G 0-0.1
H 0.9+_ 0.1
T T 0.15+0.1/-0.05
G
1. Q1 EMITTER
2. Q1 BASE
3. Q2 DRAIN
4. Q2 SOURCE
5. Q2 GATE
6. Q1 COLLECTOR
US6
Q1 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
ICP *
PC *
Tj
Tstg
* Single Pulse PW=1mS.
** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
RATING
15
12
6
500
1
150
150
-55 150
Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
VDS
VGSS
ID
PC **
Tch
Tstg
** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
RATING
30
20
100
150
150
-55 150
2008. 9. 23
Revision No : 1
UNIT
V
V
V
mA
A
mW
UNIT
V
V
mA
mW
1/6


KTX421U 데이터시트, 핀배열, 회로
KTX421U
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE
VCE(sat)
fT
VCB=15V, IE=0
VEB=6V, IC=0
IC=10 A
IC=1mA
IE=10 A
VCE=2V, IC=10mA
IC=200mA, IB=10mA
VCE=2V, IC=10mA, fT=100MHz
Collector Output Capacitance
Cob VCB=10V, IE=0, f=1MHz
MIN.
-
-
15
12
6
270
-
-
-
TYP.
-
-
-
-
-
-
90
320
7.5
MAX.
100
100
-
-
-
680
250
-
-
UNIT
nA
nA
V
V
V
-
mV
MHz
pF
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time
Turn-on Time
Turn-off Time
IGSS
V(BR)DSS
IDSS
Vth
|Yfs|
RDS(ON)
Ciss
Crss
Coss
ton
toff
TEST CONDITION
VGS= 20V, VDS=0V
ID=100 A, VGS=0V
VDS=30V, VGS=0V
VDS=3V, ID=0.1mA
VDS=3V, ID=10mA
ID=10mA, VGS=2.5V
VDS=3V, VGS=0V, f=1MHz
VDS=3V, VGS=0V, f=1MHz
VDS=3V, VGS=0V, f=1MHz
VDD=5V, ID=10mA, VGS=0 5V
MIN.
-
30
-
0.5
25
-
-
-
-
-
-
TYP.
-
-
-
-
-
4
8.5
3.3
9.3
50
160
MAX.
1
-
1
1.5
-
7
-
-
-
-
-
UNIT
A
V
A
V
mS
pF
pF
pF
nS
nS
2008. 9. 23
Revision No : 1
2/6




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KTX421U transistor

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EPITAXIAL PLANAR NPN TRANSISTOR - KEC