파트넘버.co.kr BC550 데이터시트 PDF


BC550 반도체 회로 부품 판매점

EPITAXIAL PLANAR NPN TRANSISTOR



KEC 로고
KEC
BC550 데이터시트, 핀배열, 회로
SEMICONDUCTOR
TECHNICAL DATA
LOW NOISE AMPLIFIER APPLICATION.
FEATURE
For Complementary with PNP Type BC559/560.
BC549/550
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
BC549
BC550
BC549
Collector-Emitter Voltage
BC550
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
RATING
30
50
30
45
5
100
625
150
-55 150
UNIT
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector-Emitter
Breakdown Voltage
BC549
BC550
V(BR)CEO IC=10mA, IB=0
Collector-Base
Breakdown Voltage
BC549
BC550
V(BR)CBO IC=10 A, IE=0
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Base-Emitter Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
BC549
BC550
V(BR)EBO
ICBO
hFE(Note)
VBE(ON)
VCE(sat)
VBE(sat)
fT
Cob
NF
IE=10 A, IC=0
VCB=30V, IE=0
IC=2mA, VCE=5V
IC=2mA, VCE=5V
IC=100mA, IB=5mA
IC=100mA, IB=5mA
IC=10mA, VCE=5V, f=100MHz
VCB=10V, IE=0, f=1MHz
IC=200 A, VCE=5V
Rg=10k , f=1kHz
Note : hFE Classification A:110 220, B:200 450, C:420 800
MIN.
30
45
30
50
5.0
-
110
0.55
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
0.9
300
-
-
-
MAX.
-
-
-
-
-
15
800
0.7
0.6
-
-
4.5
4.0
10
UNIT
V
V
V
nA
V
V
V
MHz
pF
dB
1999. 11. 30
Revision No : 2
1/1




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BC550 transistor

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