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WEJ |
RoHS
PZT4401
PZT4401 TRANSISTOR (NPN)
SOT-223
FEATURES
DPower dissipation
TPCM: 1 W (Tamb=25℃)
Collector current
.,LICM: 0.6 A
Collector-base voltage
V(BR)CBO: 60
V
OOperating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
1. BASE
2. COLLECTOR
3. EMITTER
CELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
ICParameter
Collector-base breakdown voltage
NCollector-emitter breakdown voltage
Emitter-base breakdown voltage
OCollector cut-off current
Emitter cut-off current
TRDC current gain
ECCollector-emitter saturation voltage
ELBase-emitter saturation voltage
Transition frequency
JCollector capacitance
EEmitter capacitance
Delay time
WRise time
Symbol Test conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
CC
CE
td
tr
Ic=100µA,IE=0
Ic=1mA,IB=0
IE=100µA,IC=0
VCB=60V,IE=0
VEB=6V,IC=0
VCE=1V,IC=0.1mA
VCE=1V,IC=1mA
VCE=1V,IC=10mA
VCE=1V,IC=150mA
VCE=2V,IC=500mA
IC=150mA,IB=15mA
IC=500mA,IB=50mA
IC=150mA,IB=15mA
IC=500mA,IB=50mA
VCE=10V,IC=20mA,f=100MHz
VCB=5V,IE=0,f=1MHz
VEB=0.5V,IC=0,f=1MHz
VCC=29.5V, IC=150mA
MIN TYP MAX UNIT
60 V
40 V
6V
50 nA
50 nA
20
40
80
100 300
40
0.4 V
0.75 V
0.95 V
1.2 V
200 MHz
8 pF
30 pF
15 nS
20 nS
Storage time
tS VBB=3.5V,IB1=- IB2=15mA
200 nS
Fall time
tf
60 nS
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