FJB5555 반도체 회로 부품 판매점
NPN Silicon Transistor
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 Fairchild Semiconductor |
FJB5555
NPN Silicon Transistor
Features
• Fast Speed Switching
• Wide Safe Operating Area
• High Voltage Capability
Application
• Electronic Ballast
• Switched Mode Power Supplies
June 2013
1 D2-PAK
1.Base 2.Collector 3.Emitter
1
B
C2
E3
Ordering Information
Part Number
FJB5555TM
Marking
J5555
Package
D2-PAK
Packing Method
Tape & Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Units
BVCBO
BVCEO
BVEBO
IC
ICP
IB
IBP
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Base Current (Pulse)
Junction Temperature
Storage Junction Temperature Range
1050
400
14
5
10
2
4
150
- 55 to +150
V
V
V
A
A
A
A
°C
°C
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
PD
Rθja(1)
Rθjc(2)
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
TA = 25°C
TC = 25°C
Value
1.6
100
77.75
1.25
Units
W
W
°C/W
°C/W
Notes:
1. Device mounted on FR-4 PCB, board size= 101.5 mm x 114.5 mm.
2. Rθjc test fixture under infinite cooling condition.
© 2008 Fairchild Semiconductor Corporation
Rev. 1.1.0
1
www.fairchildsemi.com
Electrical Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
BVCBO
BVCEO
BVEBO
hFE
VCE(sat)
VBE(sat)
Cob
tON
tSTG
tF
tON
tSTG
tF
EAS
Note:
Collector-Base Breakdown Voltage IC = 500 μA, IE = 0
Collector-Emitter Breakdown Voltage IC = 5 mA, IB = 0
Emitter-Base Breakdown Voltage IE = 500 μA, IC = 0
DC Current Gain
VCE = 5 V, IC = 10 mA
VCE = 3 V, IC = 0.8 A
Collector-Emitter Saturation Voltage IC = 1 A, IB = 0.2 A
IC = 3.5 A, IB = 1.0 A
Base-Emitter Saturation Voltage
IC = 3.5 A, IB = 1.0 A
Output Capacitance
VCB = 10 V, f = 1 MHz
Turn-On Time
Storage Time
Fall Time
VCC = 125 V, IC = 0.5 A,
IB1 = 45 mA, IB2 = -0.5 A,
RL = 250 Ω
Turn-On Time
Storage Time
Fall Time
VCC = 250 V, IC = 2.5 A,
IB1 = 0.5 A, IB2 = -1.0 A,
RL = 100 Ω
Avalanche Energy
L = 2 mH
3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%.
Min.
1050
400
14
10
20
6
Typ.
0.17
45
0.3
Max.
Units
V
V
V
40
0.50
1.5
1.2
1.0
1.2
2.0
2.5
0.3
V
V
V
pF
μs
μs
μs
μs
μs
μs
mJ
© 2008 Fairchild Semiconductor Corporation
Rev. 1.1.0
2
www.fairchildsemi.com
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FJB5555 transistor
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