파트넘버.co.kr FJB3307D 데이터시트 PDF


FJB3307D 반도체 회로 부품 판매점

High Voltage Fast Switching NPN Power Transistor



Fairchild Semiconductor 로고
Fairchild Semiconductor
FJB3307D 데이터시트, 핀배열, 회로
March 2012
FJB3307D
High Voltage Fast Switching NPN Power Transistor
Features
• Built-in Diode between Collector and Emitter
• Suitable for Electronic Ballast and Switch Mode Power Supplies
Internal Schematic Diagram
C
1 D2-PAK
1.Base 2.Collector 3.Emitter
B
E
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP * Collector Current (Pulse)
IB Base Current (DC)
IBP * Base Current (Pulse)
TJ Junction Temperature
TSTG
Storage Temperature
* Pulse Test: PW = 300μs, Duty Cycle = 2% Pulsed
Value
700
400
9
8
16
4
8
150
-55 to 150
Thermal Characteristics
Symbol
PD
Parameter
Total Device Dissipation
Rθja Thermal Resistance, Junction to Ambient
Rθjc Thermal Resistance, Junction to Case
Ta = 25°C
Tc = 25°C
Value
1.72
80
72.5
1.56
Units
V
V
V
A
A
A
A
°C
°C
Units
W
W
°C/W
°C/W
© 2012 Fairchild Semiconductor Corporation
FJB3307D Rev. A1
1
www.fairchildsemi.com


FJB3307D 데이터시트, 핀배열, 회로
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
Conditions
BVCBO Collector-Base Breakdown Voltage IC = 500μA, IE = 0
BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0
BVEBO Emitter-Base Breakdown Voltage IE = 500μA, IC = 0
IEBO
Emitter Cut-off Current
VEB = 9V, IC = 0
hFE1
hFE2
DC Current Gain
VCE = 5V, IC = 2A
VCE = 5V, IC = 5A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 5A, IB = 1A, Ta = 100°C
IC = 8A, IB = 2A
VBE(sat) Base-Emitter Saturation Voltage
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 5A, IB = 1A, Ta = 100°C
VF Diode Forward Voltage
IC = 3A
Cob Output Capacitance
VCB = 10V, IE = 0, f = 1MHz
tSTG
tF
Storage Time
Fall Time
VCC = 125V, IC = 5A
IB1 = -IB2 = 1A, RL = 50Ω
tSTG
tF
Storage Time
Fall Time
VCC = 30V, IC = 5A, L=200μH
IB1=1A, RBB = 0Ω,
VBE(OFF)= -5V,
VCLAMP = 250V
* Pulse test: PW = 300μs, Duty Cycle = 2% Pulsed
Min.
700
400
9
8
5
Typ.
60
Max.
1
40
30
1
2
3
3
1.2
1.6
2
2.5
3
0.7
2.3
Units
V
V
V
mA
V
V
V
V
V
V
V
V
pF
μs
μs
μs
150 ns
hFE Classification
Classification
hFE1
H1
15 ~ 28
H2
26 ~ 39
© 2012 Fairchild Semiconductor Corporation
FJB3307D Rev. A1
2
www.fairchildsemi.com




PDF 파일 내의 페이지 : 총 7 페이지

제조업체: Fairchild Semiconductor

( fairchild )

FJB3307D transistor

데이터시트 다운로드
:

[ FJB3307D.PDF ]

[ FJB3307D 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


FJB3307D

High Voltage Fast Switching NPN Power Transistor - Fairchild Semiconductor