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Fairchild Semiconductor |
March 2012
FJB3307D
High Voltage Fast Switching NPN Power Transistor
Features
• Built-in Diode between Collector and Emitter
• Suitable for Electronic Ballast and Switch Mode Power Supplies
Internal Schematic Diagram
C
1 D2-PAK
1.Base 2.Collector 3.Emitter
B
E
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP * Collector Current (Pulse)
IB Base Current (DC)
IBP * Base Current (Pulse)
TJ Junction Temperature
TSTG
Storage Temperature
* Pulse Test: PW = 300μs, Duty Cycle = 2% Pulsed
Value
700
400
9
8
16
4
8
150
-55 to 150
Thermal Characteristics
Symbol
PD
Parameter
Total Device Dissipation
Rθja Thermal Resistance, Junction to Ambient
Rθjc Thermal Resistance, Junction to Case
Ta = 25°C
Tc = 25°C
Value
1.72
80
72.5
1.56
Units
V
V
V
A
A
A
A
°C
°C
Units
W
W
°C/W
°C/W
© 2012 Fairchild Semiconductor Corporation
FJB3307D Rev. A1
1
www.fairchildsemi.com
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
Conditions
BVCBO Collector-Base Breakdown Voltage IC = 500μA, IE = 0
BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0
BVEBO Emitter-Base Breakdown Voltage IE = 500μA, IC = 0
IEBO
Emitter Cut-off Current
VEB = 9V, IC = 0
hFE1
hFE2
DC Current Gain
VCE = 5V, IC = 2A
VCE = 5V, IC = 5A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 5A, IB = 1A, Ta = 100°C
IC = 8A, IB = 2A
VBE(sat) Base-Emitter Saturation Voltage
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 5A, IB = 1A, Ta = 100°C
VF Diode Forward Voltage
IC = 3A
Cob Output Capacitance
VCB = 10V, IE = 0, f = 1MHz
tSTG
tF
Storage Time
Fall Time
VCC = 125V, IC = 5A
IB1 = -IB2 = 1A, RL = 50Ω
tSTG
tF
Storage Time
Fall Time
VCC = 30V, IC = 5A, L=200μH
IB1=1A, RBB = 0Ω,
VBE(OFF)= -5V,
VCLAMP = 250V
* Pulse test: PW = 300μs, Duty Cycle = 2% Pulsed
Min.
700
400
9
8
5
Typ.
60
Max.
1
40
30
1
2
3
3
1.2
1.6
2
2.5
3
0.7
2.3
Units
V
V
V
mA
V
V
V
V
V
V
V
V
pF
μs
μs
μs
150 ns
hFE Classification
Classification
hFE1
H1
15 ~ 28
H2
26 ~ 39
© 2012 Fairchild Semiconductor Corporation
FJB3307D Rev. A1
2
www.fairchildsemi.com
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