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T90RIA120 반도체 회로 부품 판매점

MEDIUM POWER PHASE CONTROL THYRISTORS



International Rectifier 로고
International Rectifier
T90RIA120 데이터시트, 핀배열, 회로
Bulletin I27105 rev. B 02/02
T..RIA SERIES
MEDIUM POWER PHASE CONTROL THYRISTORS
Features
Electrically isolated base plate
Types up to 1200 VRRM
3500 VRMS isolating voltage
Simplified mechanical designs,
rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
Power Modules
50 A
70 A
90 A
Description
These series of T-modules are inteded for general
purpose applications such as battery chargers,
welders and plating equipment, regulated power
supplies and temperature and speed control circuits.
The semiconductors are electrically isolated from the
metal base, allowing common heatsinks and compact
assemblies to be built.
Major Ratings and Characteristics
Parameters T50RIA T70RIA T90RIA Units
IT(AV)
@ TC
IT(RMS)
ITSM @50Hz
@ 60Hz
50
70
80
1310
1370
70
70
110
1660
1740
90
70
141
1780
1870
A
oC
A
A
A
I2t @ 50Hz 8550
13860 15900 A2s
@60Hz 7800
12650 14500
I2t 85500 138500 159100
VDRM/VRRM
100 to 1200
TJ -40 to 125
A2s
A2s
V
oC
www.irf.com
1


T90RIA120 데이터시트, 핀배열, 회로
T..RIA Series
Bulletin I27105 rev. B 02/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
T50RIA
T70RIA
T90RIA
Voltage
Code
10
20
40
60
80
100
120
VDRM/VRRM, maximum repetitive
peak reverse voltage
V
100
200
400
600
800
1000
1200
VRSM, maximum non-repetitive
peak reverse voltage
V
150
300
500
700
900
1100
1300
On-state Conduction
IDRM/IRRM max.
@ 25°C
µA
100
Parameter
T50RIA T70RIA T90RIA Units Conditions
IT(AV) Max. average on-state current
@ Case temperature
IT(RMS) Max. RMS on-state current
ITSM Maximum peak, one-cycle
on-state, non-repetitive
surge current
I2t Maximum I2t for fusing
I2t Maximum I2t for fusing
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1 Low level value on-state
slope resistance
rt2 High level value on-state
slope resistance
VTM Maximum on-state voltage drop
50
70
80
1310
1370
1100
1150
8550
7800
6050
5520
85500
0.97
1.13
4.1
3.3
1.60
IH Maximum holding current
IL Maximum latching current
Switching
70
70
110
1660
1740
1400
1460
13860
12650
9800
8950
138500
0.77
0.88
3.6
3.2
90
70
141
1780
1870
1500
1570
15900
14500
11250
10270
159100
0.78
0.88
2.9
2.6
A 180° conduction, half sine wave
°C
A
A t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sine half wave,
A2s t = 10ms No voltage Initial TJ = TJ max.
t = 8.3ms reapplied
A2s
V
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 0.1 to 10ms, no voltage reapplied
(16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
(I > π x IT(AV)), @ TJ max.
m(16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
(I > π x IT(AV)), @ TJ max.
1.55
200
400
1.55
V ITM = π x IT(AV), TJ = 25°C., tp = 400µs square
Av. power = VT(TO) x IT(AV) + rf x (IT(RMS))2
mA Anode supply = 6V initial IT = 30A, TJ = 25°C
mA Anode supply = 6V resistive load = 10
gate pulse: 10V, 100µs, TJ = 25°C
Parameter
T50RIA T70RIA T90RIA Units Conditions
tgd Typical turn-on time
trr Typical reverse recovery time
tq Typical turn-off time
0.9
3.0
110
µs TJ = 25oC Vd = 50% VDRM, ITM = 50 A
Ig = 500mA, tr <= 0.5, tp >= 6µs
µs TJ =125°C, ITM = 50A tp = 300µs di/dt =10A/µs
µs TJ = TJ max., ITM = 50A, tp = 300µs,
-di/dt = 15A/µs, Vr = 100V; linear to 80%VDRM
2 www.irf.com




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