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KP2000A 반도체 회로 부품 판매점

HIGH POWER THYRISTOR



ETC 로고
ETC
KP2000A 데이터시트, 핀배열, 회로
KP2000A/5000V
**********************************************************************************************************
HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS
Features:
. All Diffused Structure
. Spoke Amplifying Gate Configuration
. High dV/dt Capability
. Pressure Assembled Device
CASE 5T
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
Device Type VRRM (1) VDRM (1) VRSM (1)
KP2000A 5000
5000
5200
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse
leakage and off state leakage
Critical rate of voltage rise
IRRM / IDRM
dV/dt (4)
10 mA
200 mA (3)
1000 V/µsec
Conducting - on state
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 70% rated VDRM. Gate open.
Tj = 125 oC.
(5) Non-repetitive value.
Parameter
Average value of on-state current
RMS value of on-state current
Peak one cpstcle surge
(non repetitive) current
I square t
Latching current
Holding current
Peak on-state voltage
Critical rate of rise of on-state
current (5)
Critical rate of rise of on-state
current
Symbol Min.
IT(AV)
ITRMS
ITSM
I2t
IL
IH
VTM
di/dt
di/dt
Max. Typ.
2000
4000
40000
36000
10x106
1500
250
2.40
300
100
Units
A
A
Conditions
Sinewave,180o conduction,Tc=70oC
Nominal value
A 8.3 msec (60Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
A 10.0 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
A2s 8.3 msec and 10.0 msec
mA VD = 24 V; RL= 12 ohms
mA VD = 24 V; I = 2.5 A
V
A/µs
A/µs
ITM = 5000 A
Switching from VDRM 800 V,
non-repetitive
Switching from VDRM 800 V
KP2000A/5000V


KP2000A 데이터시트, 핀배열, 회로
Gating
Parameter
Peak gate power dissipation
Average gate power dissipation
Peak gate current
Gate current
Gate voltage
Symbol Min.
PGM
PG(AV)
Max. Typ.
200
5
Units
W
W
Conditions
tp = 40 us
IGM 20 A
IGT 300 mA
VGT 0.30 3.5
V
Dynamic
Parameter
Delay time
Turn-off time (with VR = -50 V)
Symbol Min.
td
tq
Max.
Typ. Units Conditions
µs
µs
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Operating temperature
Storage temperature
Thermal resistance - junction to
case
Thermal resistamce - case to sink
Mounting force
Weight
Symbol Min. Max. Typ.
Tj -40 +125
Tstg -40 +150
Units
oC
oC
Conditions
RΘ (j-c)
RΘ (c-s)
P
W
0.012
0.002
8000 10000
oC/W
oC/W
lb.
kN
Lb.
Kg.
Double sided cooled
Single sided cooled
Double sided cooled *
Single sided cooled *
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case
outline drawing
A: 73 MM
B: 109 MM
C: 96 MM
E: 36 MM




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