CR05AS-8 반도체 회로 부품 판매점
Thyristor Low Power Use
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 Renesas Technology |
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CR05AS-8
Thyristor
Low Power Use
Features
• IT (AV) : 0.5 A
• VDRM : 400 V
• IGT : 100 µA
Outline
REJ03G0348-0300
Rev.3.00
Mar 22, 2007
• Non-Insulated Type
• Planar Passivation Type
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK)
3
2
1
4
RENESAS Package code: PLZZ0004CB-A
(Package name: SOT-89)
4
2, 4
1
23
31
1. Cathode
2. Anode
3. Gate
4. Anode
Applications
Solid state relay, strobe flasher, igniter, and hybrid IC
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltageNote1
DC off-state voltageNote1
Symbol
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Voltage class
8 (Mark CD)
400
500
320
400
320
Unit
V
V
V
V
V
REJ03G0348-0300 Rev.3.00 Mar 22, 2007
Page 1 of 8
CR05AS-8
Parameter
RMS on-state current
Average on-state current
Symbol
IT (RMS)
IT (AV)
Ratings
0.79
0.5
Surge on-state current
I2t for fusing
ITSM
10
I2t 0.4
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
0.1
0.01
6
6
0.1
– 40 to +125
Storage temperature
Tstg – 40 to +125
Mass
— 50
Notes: 1. With gate to cathode resistance RGK = 1 kΩ.
Unit
A
A
A
A2s
W
W
V
V
A
°C
°C
mg
Conditions
Commercial frequency, sine half wave
180° conduction, Ta = 57°CNote2
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Electrical Characteristics
Parameter
Symbol
Rated value
Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak reverse current
IRRM — — 0.1 mA Tj = 125°C, VRRM applied
Repetitive peak off-state current IDRM — — 0.1 mA Tj = 125°C, VDRM applied,
RGK = 1 kΩ
On-state voltage
VTM — — 1.9 V Ta = 25°C, ITM = 1.5 A,
instantaneous value
Gate trigger voltage
VGT — — 0.8 V Tj = 25°C, VD = 6 V,
IT = 0.1 ANote4
Gate non-trigger voltage
Gate trigger current
VGD 0.2 — — V Tj = 125°C, VD = 1/2 VDRM,
RGK = 1 kΩ
IGT
20
—
100Note3
µA Tj = 25°C, VD = 6 V,
IT = 0.1 ANote4
Holding current
Thermal resistance
IH
Rth (j-a)
—
—
—
—
3 mA Tj = 25°C, VD = 12 V,
RGK = 1 kΩ
70 °C/W Junction to ambientNote2
Notes: 2. Soldering with ceramic plate (25 mm × 25 mm × t0.7 mm).
3. If special values of IGT are required, choose item E from those listed in the table below if possible.
Item
B
E
IGT (µA)
20 to 50 20 to 100
The above values do not include the current flowing through the 1 kΩ resistance between the gate and
cathode.
4. IGT, VGT measurement circuit.
60Ω
A1
IGS IGT
TUT
A3 A2
3V
DC
RGK
1
V1
2
6V
DC
1kΩ VGT
Switch
Switch 1 : IGT measurement
Switch 2 : VGT measurement
(Inner resistance of voltage meter is about 1kΩ)
REJ03G0348-0300 Rev.3.00 Mar 22, 2007
Page 2 of 8
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CR05AS-8 thyristor
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