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XT2116-1201 반도체 회로 부품 판매점

Fast Turn-on Asymmetric Thyristor



Dynex Semiconductor 로고
Dynex Semiconductor
XT2116-1201 데이터시트, 핀배열, 회로
Replaces March 1998 version, DS4674-2.2
XT2116
XT2116
Fast Turn-on Asymmetric Thyristor
Advance Information
DS4674-3.0 January 2000
APPLICATIONS
s Pulse Modulators
s Laser Diode Triggering
s Capacitor Discharge Applications
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dIdt
1600V
50A
800A
2000A/µs
dV/dt
300V/µs
ton 350ns
FEATURES
s The XT2116 is Asymmetrical Thyristor in which the
reverse voltage capability has been sacrificed to enable a
high forward blocking characteristic combined with
excellent turn-on performance.
s Designed for rapid and efficient switching of high
current pulses.
VOLTAGE RATINGS
Type Number
XT2116 - 1601
XT2116 - 1401
XT2116 - 1201
XT2116 - 1001
XT2116 - 801
Max. Rise Time
tr
(Tcase = 25˚C)
ns
100
120
120
140
160
Outline type code: SO28.
See Package Details for further information.
Repetitive Peak Voltage
V
DRM
V
1600
1400
1200
1000
800
V*
RRM
V
<2
<2
<2
<2
<2
Peak Working Voltages
V
DWM
V
1600
1400
1200
1000
800
V*
RWM
V
<2
<2
<2
<2
<2
CURRENT RATINGS
Symbol
I
T(AV)
I
T(RMS)
I
T
Parameter
Mean on-state current
RMS value
Continuous (direct) on-state current
Conditions
Half wave resistive load, Tcase = 80oC
T = 80oC
case
T = 85oC
case
Max.
50
79
68
Units
A
A
A
1/4


XT2116-1201 데이터시트, 핀배열, 회로
XT2116
SURGE RATINGS
Symbol
ITSM
I2t
Parameter
Surge (non-repetitive) forward current
I2t for fusing
THERMAL AND MECHANICAL DATA
Symbol
Parameter
R
th(j-c)
R
th(c-h)
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Tvj Virtual junction temperature
Tstg Storage temperature range
- Mounting torque
* Recommended value.
Conditions
10ms half sine; T = 125oC
case
Conditions
d.c.
Mounting torque 3.5Nm
with mounting compound
On-state (conducting)
Max.
800
3200
Units
A
A2s
Min. Max. Units
- 0.35 oC/W
- 0.25 oC/W
- 125 oC
-55 125
oC
3.5* 4.0 Nm
DYNAMIC CHARACTERISTICS
Tcase = 25˚C unless otherwise stated.
Symbol
Parameter
Conditions
Typ. Max. Units
VTM Maximum on-state voltage
At I = 100A
T
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM
dV/dt
dI/dt
IL
Maximum linear rate of rise of off-state voltage
Rate of rise of on-state current
Tj = 125oC, To VDRM, RGK = 47
Half sine wave of 2µs, Tj = 125˚C
Gate
source
20V,
10.
t
r
=
160ns
Latching current
-
I Holding current
H
-
t Delay time
d
tq Circuit commutated turn-off time
Available to 10µs.
V = 400V, gate source = 500mA, t = 50ns
Dr
IT = 25A, VRM = 0V, VDR = VDWM, Tcase =120˚C,
RGK = 47, dV/dt = 100V/µs.
-
-
-
-
45
35
-
-
2.0 V
10/10 mA
300 V/µs
2000 A/µs
-
-
250
120
mA
mA
ns
µs
2/4




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XT2116-1201 thyristor

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Fast Turn-on Asymmetric Thyristor - Dynex Semiconductor