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Phase Control Thyristor



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IXYS
N2520ML120 데이터시트, 핀배열, 회로
Date:- 07 Nov, 2013
Data Sheet Issue:- 1
Wespack Phase Control Thyristor
Types N2520ML080 to N2520ML140
Development Type No.: NX366ML140
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
800-1400
800-1400
800-1400
900-1500
UNITS
V
V
V
V
OTHER RATINGS
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)M
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
(continuous, 50Hz)
Critical rate of rise of on-state current (note 6) (repetitive, 50Hz, 60s)
(non-repetitive)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Cathode side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, ITM=2000A, IFG=2A, tr0.5µs, Tcase=125°C.
Data Sheet. Types N2520ML080 to N2520ML140 Issue 1
Page 1 of 11
MAXIMUM
LIMITS
2520
1650
855
3255
4115
38.2
42.0
7.30×106
8.82×106
100
200
400
5
4
30
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
V
W
W
°C
°C
November, 2013


N2520ML120 데이터시트, 핀배열, 회로
Characteristics
Wespack Phase Control Thyristor Types N2520ML080 to N2520ML140
PARAMETER
VTM Maximum peak on-state voltage
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
VGD Gate non-trigger voltage
IH Holding current
tgd Gate-controlled turn-on delay time
tgt Turn-on time
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irm Reverse recovery current
trr Reverse recovery time
tq Turn-off time
RthJK Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
25
-
TYP. MAX. TEST CONDITIONS (Note 1)
-
-
-
-
-
-
-
-
-
-
-
0.8
1.4
2600
1800
150
24
250
300
-
-
-
-
550
1.25
1.79
0.980
ITM=3000A
ITM=9000A
0.090
- VD=80% VDRM, linear ramp, gate o/c
100 Rated VDRM
100 Rated VRRM
3.0
Tj=25°C
300
VD=10V, IT=3A
0.25
1000
2.0
3.0
Rated VDRM
Tj=25°C
VD=67% VDRM, IT=2000A, di/dt=10A/µs,
IFG=2A, tr=0.5µs, Tj=25°C
-
2100 ITM=1000A, tp=1000µs, di/dt=10A/µs,
- Vr=50V
-
-
-
0.018
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/µs
Double side cooled
0.033 Anode side cooled
0.040 Cathode side cooled
31 Note 2.
-
UNITS
V
V
V
m
V/µs
mA
mA
V
mA
V
mA
µs
µs
µC
µC
A
µs
µs
K/W
K/W
K/W
kN
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) For other clamp forces, please consult factory.
Data Sheet. Types N2520ML080 to N2520ML140 Issue 1
Page 2 of 11
November, 2013




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