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N2500VC120 반도체 회로 부품 판매점

Phase Control Thyristor



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IXYS
N2500VC120 데이터시트, 핀배열, 회로
WESTCODE
Date:- 20 Nov, 2001
Data Sheet Issue:- 1
Phase Control Thyristor
Types N2500VC120 to N2500VC160
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1200-1600
1200-1600
1200-1600
1300-1700
UNITS
V
V
V
V
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
diT/dt
VRGM
PG(AV)
PGM
VGD
THS
Tstg
OTHER RATINGS
Mean on-state current. Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Mean on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current. Tsink=25°C, (note 2)
D.C. on-state current. Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes: -
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, ITM=1000A, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
2500
1684
992
4985
4199
37000
45000
6.85×106
10.1×106
150
300
5
5
30
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A
A2s
A2s
A/µs
A/µs
V
W
W
V
°C
°C
Data Sheet. Types N2500VC120 to N2500VC160 Issue 1.
Page 1 of 10
November, 2001


N2500VC120 데이터시트, 핀배열, 회로
WESTCODE Positive development in power electronics
Characteristics
N2500VC120 to N2500VC160
PARAMETER
VTM
V0
rS
dv/dt
IDRM
IRRM
VGT
IGT
IH
tgd
tgt
Qrr
Qra
Irm
trr
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Critical rate of rise of off-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Holding current
Gate controlled turn-on delay time
Turn-on time
Recovered Charge
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
tq Turn-off time
Rth(j-hs) Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
200
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
27
-
TYP. MAX. TEST CONDITIONS (Note 1)
-
-
-
-
-
-
-
-
-
1.0
1.5
2200
1300
100
20.0
500
800
-
-
-
1.0
1.28 ITM=3220A
0.88
0.124
- VD=80% VDRM, linear ramp, Gate O/C
150 Rated VDRM
150 Rated VRRM
3.0
Tj=25°C, VD=10V, IT=3A
300
1000 Tj=25°C
2.0 VD=67%VDRM, ITM=2000A, di/dt=10A/µs,
2.5 IFG=2A, tr=0.5µs, Tj=25°C
-
1800 ITM=1000A, tp=1000µs, di/dt=10A/µs,
- Vr=50V
-
800
1200
0.017
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=33%VDRM, dVdr/dt=20V/µs
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/µs
Double side cooled
0.034 Single side cooled
34
-
UNITS
V
V
m
V/µs
mA
mA
V
mA
mA
µs
µC
µC
A
µs
µs
K/W
K/W
kN
kg
Notes: -
1) Unless otherwise indicated Tj=125°C.
Data Sheet. Types N2500VC120 to N2500VC160 Issue 1.
Page 2 of 10
November, 2001




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