N0795YN100 반도체 회로 부품 판매점
Phase Control Thyristor
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 IXYS |
Date:- 6th December, 2012
Data Sheet Issue:- A1
Phase Control Thyristor
Types N0795YN100 to N0795YN180
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
OTHER RATINGS
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)M
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm≤10V, (note 5)
(continuous, 50Hz)
Critical rate of rise of on-state current (note 6) (repetitive, 50Hz, 60s)
(non-repetitive)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Anode side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, ITM=1000A, IFG=2A, tr≤0.5µs, Tcase=125°C.
Data Sheet. Types N0795YN100 to N0795YN180 Issue A1
Page 1 of 12
MAXIMUM
LIMITS
1000-1800
1100-1900
1000-1800
1100-1900
MAXIMUM
LIMITS
795
540
300
1580
1340
9450
10500
444×103
551×103
250
500
1000
5
3
30
-60 to +125
-60 to +125
UNITS
V
V
V
V
UNITS
A
A
A
A
A
A
A
A2s
A2s
A/µs
V
W
W
°C
°C
December, 2012
Characteristics
Phase Control Thyristor Types N0795YN100 to N0795YN180
PARAMETER
VTM Maximum peak on-state voltage
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
VGD Gate non-trigger voltage
IH Holding current
tgd Gate-controlled turn-on delay time
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irr Reverse recovery current
trr Reverse recovery time
tq Turn-off time
RthJK Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
9.0
-
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
- 1.30 ITM=785A
- 2.00 ITM=2350A
- 0.95
V
V
V
- 0.45
mΩ
- - VD=67% VDRM, linear ramp, gate o/c
- 30 Rated VDRM
- 30 Rated VRRM
- 2.50
Tj=25°C
- 150
VD=10V, IT=3A
V/µs
mA
mA
V
mA
- 0.25 Rated VDRM
- 300 Tj=25°C
-
2.0
VD=67% VDRM, IT=2000A, di/dt=10A/µs,
IFG=2A, tr=0.5µs, Tj=25°C
- 850
V
mA
µs
µC
- 750
µC
ITM=500A, tp=500µs, di/dt=10A/µs, Vr=100V
- 100
A
- 15
µs
-
125
ITM=500A, tp=500µs, di/dt=10A/µs, Vr=50V,
Vdr=67%VDRM, dVdr/dt=50V/µs
µs
- 0.048 Double side cooled
K/W
- 0.104 Anode side cooled
- 0.088 Cathode side cooled
K/W
- 11.0 Note 2.
kN
110 -
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) For other clamp forces, please consult factory.
Data Sheet. Types N0795YN100 to N0795YN180 Issue A1
Page 2 of 12
December, 2012
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N0795YN100 thyristor
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