VWO35-12HO7 반도체 회로 부품 판매점
Thyristor Module
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 IXYS |
Thyristor Module
AC Controlling
3~ full-controlled
Part number
VWO35-12HO7
VWO35-12HO7
VRRM = 1200 V
I TAV
=
16 A
VT = 1.19 V
HA
JC
MF
Backside: isolated
IB
Features / Advantages:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Direct Copper Bonded Al2O3-ceramic
LE
NG
Applications:
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
Package: ECO-PAC1
● Isolation Voltage: 3000 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 9 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20160909a
VWO35-12HO7
Rectifier
Ratings
Symbol
VRSM/DSM
VRRM/DRM
I R/D
VT
I TAV
I RMS
VT0
rT
R thJC
RthCH
Ptot
I TSM
I²t
CJ
PGM
PGAV
(di/dt)cr
(dv/dt)cr
VGT
IGT
VGD
IGD
IL
IH
t gd
tq
Definition
Conditions
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
forward voltage drop
average forward current
RMS forward current per phase
VR/D = 1200 V
VR/D = 1200 V
IT = 15 A
I T = 30 A
IT = 15 A
I T = 30 A
TC = 85°C
180° sine
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125 °C
TVJ = 125°C
min.
typ. max. Unit
1300 V
1200 V
50 µA
2 mA
1.23 V
1.48 V
1.19 V
1.51 V
16 A
35 A
threshold voltage
slope resistance
for power loss calculation only
TVJ = 125°C
0.88 V
21 mΩ
thermal resistance junction to case
1.3 K/W
thermal resistance case to heatsink
0.500
K/W
total power dissipation
TC = 25°C
77 W
max. forward surge current
value for fusing
junction capacitance
max. gate power dissipation
average gate power dissipation
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400 V
tP = 30 µs
tP = 300 µs
f = 1 MHz
TVJ = 45°C
VR = 0 V
TVJ = 125°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 125°C
VR = 0 V
TVJ = 25°C
TC = 125°C
200 A
215 A
170 A
185 A
200 A²s
190 A²s
145 A²s
140 A²s
7 pF
5W
2.5 W
0.5 W
critical rate of rise of current
critical rate of rise of voltage
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
TVJ = 125 °C; f = 50 Hz
repetitive, IT = 45 A
tP = 200 µs; diG /dt =0.15 A/µs;
IG = 0.15 A; V = ⅔ VDRM
non-repet., IT = 15 A
V = ⅔ VDRM
TVJ = 125°C
R GK = ∞; method 1 (linear voltage rise)
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = ⅔ VDRM
TVJ = 125°C
100 A/µs
500 A/µs
500 V/µs
1.5 V
2.5 V
25 mA
50 mA
0.2 V
3 mA
latching current
holding current
gate controlled delay time
turn-off time
t p = 10 µs
TVJ = 25 °C
IG = 0.1 A; diG/dt = 0.1 A/µs
VD = 6 V RGK = ∞
TVJ = 25 °C
VD = ½ VDRM
TVJ = 25 °C
IG = 0.1 A; diG/dt = 0.1 A/µs
VR = 100 V; IT = 15 A; V = ⅔ VDRM TVJ =100 °C
di/dt = 10 A/µs dv/dt = 20 V/µs tp = 200 µs
75 mA
50 mA
2 µs
150 µs
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20160909a
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VWO35-12HO7 thyristor
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