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K0625QA650 반도체 회로 부품 판매점

Medium Voltage Thyristor



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IXYS
K0625QA650 데이터시트, 핀배열, 회로
Date:- 22th June, 2015
Data Sheet Issue:- P1
Medium Voltage Thyristor
Types K0625QA600 & K0625QA650
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
6000-6500
6000-6500
6000-6500
6100-6600
UNITS
V
V
V
V
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
diT/dt
VRGM
PG(AV)
PGM
VGD
THS
Tstg
OTHER RATINGS
Mean on-state current. Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Mean on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current. Tsink=25°C, (note 2)
D.C. on-state current. Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes: -
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Cathode side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, ITM=1300A, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
640
450
255
1240
1125
7.7
8.5
296×103
361×103
200
1000
5
2
30
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
A/µs
V
W
W
V
°C
°C
Data Sheet. Types K0625QA600 and K0625QA650 Issue P1.
Page 1 of 10
June, 2015


K0625QA650 데이터시트, 핀배열, 회로
Characteristics
Medium Voltage Thyristor Types K0625QA600 and K0625QA650
PARAMETER
VTM Maximum peak on-state voltage
V0 Threshold voltage
rT Slope resistance
dv/dt Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
IH Holding current
tgd Gate controlled turn-on delay time
tgt Turn-on time
Qrr Recovered Charge
Qra Recovered Charge, 50% chord
Irm Reverse recovery current
trr Reverse recovery time, 50% chord
tq Turn-off time
R Thermal resistance, junction to
thJK heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
650
1000
-
-
-
16
-
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
-
-
-
-
-
-
-
-
-
0.5
1.5
4750
1550
115
27
-
-
-
-
-
-
300
3.20 ITM=1000A
1.46
1.75
- VD=80% VDRM, Linear ramp, gate o/c
150 Rated VDRM
150 Rated VRRM
3.0
Tj=25°C, VD=10V, IT=3A
300
1000
1.6
5.0
Tj=25°C
IFG=2A, tr=0.5µs, VD=67%VDRM,
ITM=1000A, di/dt=10A/µs, Tj=25°C
5000
- ITM=1000A, tp=1000µs, di/dt=10A/µs,
125 Vr=100V
-
850
1100
0.026
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=100V, Vdr=80%VDRM, dVdr/dt=20V/µs
(Note 2)
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=100V, Vdr=80%VDRM, dVdr/dt=200V/µs
(Note 2)
Double side cooled
0.062 Cathode side cooled
0.046 Anode side cooled
20 (Note 3)
-
V
V
m
V/µs
mA
mA
V
mA
mA
µs
µC
µC
A
µs
µs
K/W
K/W
K/W
kN
kg
Notes: -
1) Unless otherwise stated Tj=125°C.
2) Standard test condition for tq dVdr/dt=20V/µs. For other dVdr/dt values please consult factory.
3) For other clamp forces please consult factory.
Data Sheet. Types K0625QA600 and K0625QA650 Issue P1.
Page 2 of 10
June, 2015




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