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Distributed Gate Thyristor



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IXYS
R5370EA22K 데이터시트, 핀배열, 회로
Date:- 11th May, 2017
Data Sheet Issue:- A3
Distributed Gate Thyristor
Types R5370EA18# and R5370EA22#
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
IT(AVM)
IT(AVM)
IT(AVM)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
OTHER RATINGS
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Critical rate of rise of on-state current (repetitive), (Note 6)
Critical rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Cathode side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
MAXIMUM
LIMITS
1800-2200
1900-2300
1800-2200
1900-2300
UNITS
V
V
V
V
MAXIMUM
LIMITS
5370
3510
1665
10905
8760
70
76.8
24.5×106
29.5×106
500
1000
5
5
50
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
A/µs
V
W
W
°C
°C
Data Sheet. Types R5370EA18# and R5370EA22# Issue A3
Page 1 of 13
May, 2017


R5370EA22K 데이터시트, 핀배열, 회로
Characteristics
Distributed Gate Thyristor types R5370EA18# and R5370EA22#
PARAMETER
VTM Maximum peak on-state voltage
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
VGD Gate non-trigger voltage
IH Holding current
tgd Gate controlled turn-on delay time
tgt Turn-on time
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irm Reverse recovery current
trr Reverse recovery time
tq Turn-off time (note 2)
RthJK Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
-
200
-
-
-
-
-
-
-
-
-
-
-
-
40
50
-
-
-
76
-
TYP. MAX. TEST CONDITIONS (Note 1)
-
-
-
-
-
-
-
-
-
-
-
0.8
2.0
3000
1850
370
10
-
-
-
-
-
-
1.55
2.0 ITM=4800A
2.35 ITM=9600A
1.661
0.071
- VD=80% VDRM, Linear ramp, Gate o/c
200 Rated VDRM
200 Rated VRRM
3.0
Tj=25°C
600
VD=10V, IT=3A
0.25 Rated VDRM
1000 Tj=25°C
2.0 VD=67% VDRM, ITM=4800A, di/dt=60A/µs,
3.0 IFG=2A, tr=0.5µs, Tj=25°C
3300
- ITM=1000A, tp=1000µs, di/dt=60A/µs,
- Vr=50V
-
50
ITM=4800A, tp=1000µs, di/dt=60A/µs,
Vr=100V, Vdr=67%VDRM, dVdr/dt=20V/µs
60
ITM=4800A, tp=1000µs, di/dt=60A/µs,
Vr=100V, Vdr=67%VDRM, dVdr/dt=200V/µs
0.0050 Double side cooled
0.0087 Anode side cooled
0.0123 Cathode side cooled
93
-
UNITS
V
V
V
m
V/µs
mA
mA
V
mA
V
mA
µs
µC
µC
A
µs
µs
K/W
K/W
K/W
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information
for details of tq codes.
Data Sheet. Types R5370EA18# and R5370EA22# Issue A3
Page 2 of 13
May, 2017




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