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R3047TC26L 반도체 회로 부품 판매점

Distributed Gate Thyristor



Westcode Semiconductors 로고
Westcode Semiconductors
R3047TC26L 데이터시트, 핀배열, 회로
WESTCODE
Date:- 25 May, 2001
Data Sheet Issue:- 2
Provisional Data
Distributed Gate Thyristor
Types R3047TC24x to R3047TC28x
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS (Note 1)
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
MAXIMUM
LIMITS
2400-2800
2400-2800
2400-2800
2500-2900
UNITS
V
V
V
V
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
diT/dt
VRGM
PG(AV)
PGM
VGD
THS
Tstg
OTHER RATINGS
Mean on-state current, Tsink=55°C (note 2)
Mean on-state current. Tsink=85°C (note 2)
Mean on-state current. Tsink=85°C (note 3)
Nominal RMS on-state current, Tsink=25°C (note 2)
D.C. on-state current, Tsink=25°C (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM (note 5)
Peak non-repetitive surge tp=10ms, VRM10V (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM (note 5)
I2t capacity for fusing tp=10ms, VRM10V (note 5)
Maximum rate of rise of on-state current (repetitive) (Note 6)
Maximum rate of rise of on-state current (non-repetitive) (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage (Note 7)
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
Page 1 of 12
MAXIMUM
LIMITS
3047
2043
1196
6094
5097
50
55
12.5×106
15.1×106
500
1000
5
4
50
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
A/µs
V
W
W
V
°C
°C
May, 2001


R3047TC26L 데이터시트, 핀배열, 회로
WESTCODE Positive development in power electronics
Characteristics
R3047TC24x-28x
PARAMETER
VTM
V0
rS
dv/dt
IDRM
IRRM
VGT
IGT
IH
tgd
tgt
Qrr
Qra
Irm
trr
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Critical rate of rise of off-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Holding current
Gate-controlled turn-on delay time
Turn-on time
Recovered charge
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time, 50% chord
tq Turn-off time
Rth(j-hs) Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
200
-
-
-
-
-
-
-
-
-
-
-
-
60
-
-
63
-
TYP. MAX. TEST CONDITIONS (Note 1)
-
-
-
-
-
-
-
-
-
0.7
1.5
1900
950
260
7.3
-
85
-
-
-
1.23
2.45 ITM=5000A
1.581
0.171
- VD=80% VDRM, linear ramp
200 Rated VDRM
200 Rated VRRM
3.0
600 Tj=25°C
VD=10V, IT=3A
1000 Tj=25°C
1.5 VD=67% VDRM, IT=2000A, di/dt=60A/µs,
3.0 IFG=2A, tr=0.5µs, Tj=25°C
-
1180 ITM=4000A, tp=2000µs, di/dt=60A/µs,
- Vr=100V
-
80
100
0.008
ITM=4000A, tp=2000µs, di/dt=60A/µs,
Vr=100V, Vdr=67%VDRM, dVdr/dt=20V/µs
ITM=4000A, tp=2000µs, di/dt=60A/µs,
Vr=100V, Vdr=67%VDRM, dVdr/dt=200V/µs
Double side cooled
0.016 Single side cooled
77
-
UNITS
V
V
m
V/µs
mA
mA
V
mA
mA
µs
µC
µC
A
µs
µs
K/W
K/W
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information
for details of tq codes.
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
Page 2 of 12
May, 2001




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R3047TC26L thyristor

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