파트넘버.co.kr R1700MC21F 데이터시트 PDF


R1700MC21F 반도체 회로 부품 판매점

Distributed Gate Thyristor



IXYS 로고
IXYS
R1700MC21F 데이터시트, 핀배열, 회로
WESTCODE
Date:- 24 August, 2011
Data Sheet Issue:- P1
An IXYS Company
Prospective Data
Distributed Gate Thyristor
Type R1700MC18x to R1700MC21x
(Development Part Number: RX228MC18x-21x)
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1800-2100
1800-2100
1800
1900
UNITS
V
V
V
V
OTHER RATINGS
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Non-repetitive
Critical rate of rise of on-state current (note 6) Repetitive (50Hz, 60s)
Continuous (50Hz)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
MAXIMUM
LIMITS
1700
1150
610
3500
2875
20
22
2.00×106
2.42×106
1500
1000
500
5
5
30
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
V
W
W
°C
°C
Prospective Data Sheet. Types R1700MC18x to R1700MC21x Issue P1
Page 1 of 4
August, 2011


R1700MC21F 데이터시트, 핀배열, 회로
WESTCODE An IXYS Company
Characteristics
Distributed Gate Thyristor Types R1700MC18x to R1700MC21x
PARAMETER
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
VGD Gate non-trigger voltage
IH Holding current
tgd Gate controlled turn-on delay time
tgt Turn-on time
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irm Reverse recovery current
trr Reverse recovery time
tq Turn-off time (note 2)
RthJK
Thermal resistance, junction to heatsink
(note 3)
F Mounting force
Wt Weight
MIN.
-
-
-
200
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
27
-
TYP. MAX. TEST CONDITIONS (Note 1)
-
-
-
-
-
-
-
-
-
-
0.5
1.0
1400
750
230
6.5
30
40
-
-
-
-
550
2.10 ITM=1700A
1.60
0.25
- VD=80% VDRM, Linear ramp, Gate o/c
100 Rated VDRM
100 Rated VRRM
3.0
Tj=25°C
300
VD=10V, IT=3A
0.25
1000
1.0
2.0
Rated VDRM
Tj=25°C
VD=67% VDRM, ITM=2000A, di/dt=60A/µs,
IFG=2A, tr=0.5µs, Tj=25°C
1500
- ITM=1000A, tp=1000µs, di/dt=60A/µs,
- Vr=100V
-
-
-
0.015
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=100V, Vdr=33%VDRM, dVdr/dt=20V/µs
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=100V, Vdr=33%VDRM, dVdr/dt=200V/µs
Double side cooled
0.028 Anode side cooled
0.033 Cathode side cooled
34
-
UNITS
V
V
m
V/µs
mA
mA
V
mA
V
mA
µs
µC
µC
A
µs
µs
K/W
K/W
kN
g
Notes:-
2) Unless otherwise indicated Tj=125°C.
3) The required tq (specified with dVdr/dt=200V/µs) is represented by ‘x’ in the device part number. See ordering
information for details of tq codes.
4) For other clamp forces, please consult factory
Prospective Data Sheet. Types R1700MC18x to R1700MC21x Issue P1
Page 2 of 4
August, 2011




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R1700MC21F thyristor

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