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Distributed Gate Thyristor



Westcode Semiconductors 로고
Westcode Semiconductors
R1124NS18M 데이터시트, 핀배열, 회로
WESTCODE
Date:- 20 Jun, 2001
Data Sheet Issue:- 1
Distributed Gate Thyristor
Types R1124NS16x to R1124NS18x
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1600-1800
1600-1800
1600-1800
1700-1900
UNITS
V
V
V
V
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
diT/dt
VRGM
PG(AV)
PGM
VGD
THS
Tstg
OTHER RATINGS
Mean on-state current, Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Mean on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
1124
744
429
2263
1856
13.5
15.0
910
1130
1000
1500
5
2
30
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
kA2s
kA2s
A/µs
A/µs
V
W
W
V
°C
°C
Data Sheet. Types R1124NS16x to R1124NS18x Issue 1
Page 1 of 12
June, 2001


R1124NS18M 데이터시트, 핀배열, 회로
WESTCODE Positive development in power electronics
Characteristics
R1124NS16x to R1124NS18x
VTM
V0
rs
dv/dt
IDRM
IRRM
VGT
IGT
IH
tgt
tgd
Qrr
Qra
Irm
trr
PARAMETER
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Critical rate of rise of off-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Holding current
Gate-controlled turn-on delay time
Turn-on time
Recovered charge
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time
tq Turn-off time (note 2)
Rth(j-hs) Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
200
-
-
-
-
-
-
-
-
-
-
-
-
60
-
-
19
-
TYP.
-
-
-
-
-
-
-
-
-
0.6
1.5
640
400
160
4.22
-
-
-
-
-
510
MAX. TEST CONDITIONS (Note 1)
2.3 ITM=2000A
1.54
0.379
- VD=80% VDRM, linear ramp
150 Rated VDRM
150 Rated VRRM
3.0
Tj=25°C
300
VD=10V, IT=3A
1000 Tj=25°C
1.0 VD=67% VDRM, IT=1500A, di/dt=60A/µs,
2.0 IFG=2A, tr=0.5µs, Tj=25°C
-
450 ITM=1000A, tp=1000µs, di/dt=60A/µs,
- Vr=50V
-
65
70
0.024
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/µs
Double side cooled
0.048 Single side cooled
26
-
UNITS
V
V
m
V/µs
mA
mA
V
mA
mA
µs
µC
µC
A
µs
µs
K/W
K/W
kN
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information
for details of tq codes.
Introduction
The R1124 series of Distributed Gate thyristors have fast switching characteristics provided by a
regenerative, interdigitated gate. They also exhibit low switching losses. They are therefore suitable for
medium frequency applications.
Data Sheet. Types R1124NS16x to R1124NS18x Issue 1
Page 2 of 12
June, 2001




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