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PDF P0128SH10E Data sheet ( Hoja de datos )
| Número de pieza | P0128SH10E | |
| Descripción | Fast Turn-off Thyristor | |
| Fabricantes | IXYS | |
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Date:- 12 Aug, 2003
Data Sheet Issue:- 1
Fast Turn-off Thyristor
Type P0128SH10# to P0128SH12#
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
IT(AVM)
IT(AVM)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
OTHER RATINGS
Maximum average on-state current, Tcase=55°C, (note 2)
Maximum average on-state current. Tcase=85°C, (note 2)
Nominal RMS on-state current, Tcase=25°C, (note 2)
D.C. on-state current, Tcase=25°C
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 3)
Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 3)
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 3)
I2t capacity for fusing tp=10ms, Vrm≤10V, (note 3)
Critical rate of rise of on-state current (repetitive), (Note 4)
Critical rate of rise of on-state current (non-repetitive), (Note 4)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Single phase; 50Hz, 180° half-sinewave.
3) Half-sinewave, 125°C Tj initial.
4) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C.
MAXIMUM
LIMITS
1000-1200
1000-1200
1000-1200
1100-1300
UNITS
V
V
V
V
MAXIMUM
LIMITS
128
83
260
206
1700
1950
19000
13700
500
1000
5
1.5
30
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A2s
A2s
A/µs
A/µs
V
W
W
°C
°C
Data Sheet. Type P0128SH10# to P0128SH12# Issue 1
Page 1 of 12
August, 2003
1 page  
WESTCODE An IXYS Company
Distributed Gate Thyristor types P0128SH10# to P0128SH12#
15.0 Reverse Recovery Loss
15.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from the following:
( )TSINK (new) = TSINK (original ) − E ⋅ k + f ⋅ Rth(J −Hs )
Where k=0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W).
The total dissipation is now given by:
W (TOT) = W (original) + E ⋅ f
15.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
( )TSINK (new) = TSINK (original ) − E ⋅ Rth ⋅ f
Where TSINK (new) is the required maximum heat sink temperature and
TSINK (original) is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge, care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
R2
=
4⋅
Vr
CS ⋅ di dt
Vr = Commutating source voltage
Where: CS = Snubber capacitance
R = Snubber resistance
Data Sheet. Type P0128SH10# to P0128SH12# Issue 1
Page 5 of 12
August, 2003
5 Page 
WESTCODE An IXYS Company
Figure 17 - Square wave energy per pulse
1.00E+02
P0128SH10#-12#
Issue 1
di/dt=100A/µs
Tj=125°C
1.00E+01
500A
400A
300A
Distributed Gate Thyristor types P0128SH10# to P0128SH12#
Figure 18 - Square wave energy per pulse
1.00E+02
P0128SH10#-12#
Issue 1
di/dt=500A/µs
Tj=125°C
1.00E+01
500A
400A
300A
1.00E+00
1.00E-01
200A
100A
1.00E+00
1.00E-01
200A
100A
1.00E-02
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
1.00E-02
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
Figure 19 - Maximum surge and I2t Ratings
10000
Gate may temporarily lose control of conduction angle
I2t: VRRM≤10V
1.00E+05
I2t: 60% VRRM
1000
1.00E+04
ITSM: VRRM≤10V
ITSM: 60% VRRM
100
1
3 5 10
Duration of surge (ms)
Tj (initial) = 125°C
1.00E+03
1
5 10
50 100
Duration of surge (cycles @ 50Hz)
Data Sheet. Type P0128SH10# to P0128SH12# Issue 1
Page 11 of 12
August, 2003
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet P0128SH10E.PDF ] | |
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