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BLUE ROCKET ELECTRONICS |
MCR100
Rev.F Mar.-2016
描述 / Descriptions
TO-92 塑封封装单向可控硅。Thyristor in a TO-92 Plastic Package.
特征 / Features
阻断电压高、浪涌电流承受能力强。
High Blocking Voltage、High Surge Current Capability.
用途 / Applications
应用于高压控制电路。
Applied to high Voltage control circuit.
内部等效电路 / Equivalent Circuit
DATA SHEET
引脚排列 / Pinning
123
PIN1:Anode
PIN 2:Gate PIN 3:Cathode
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
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MCR100
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Repetitive peak off-state voltages
Repetitive peak off-state voltages
RMS on-state current
Non-repetitive peak on-state
current
I2t for fusing
Peak gate power
Peak Average power
Peak gate current
Peak Reverse Gate Voltage
Junction Temperature
Storage Temperature Range
符号
Symbol
VDRM,
VRRM
IT(RMS)
ITSM
I2t
PGM
PG(AV)
IGM
VRGM
Tj
Tstg
测试条件
Test Conditions
Tj=-40 to 110℃,Sine Wave,
50 to 60Hz,Gate Open
MCR100-3
MCR100-4
MCR100-6
MCR100-8
Tc=80℃
1/2 Cycle, Sine Wave, 60Hz,
Tj=25℃
t=8.3ms
TA=25℃,Pulse Width≤1.0μs
TA=25℃,t=8.3ms
TA=25℃,Pulse Width≤1.0μs
TA=25℃,Pulse Width≤1.0μs
DATA SHEET
数值
Rating
100
200
400
600
单位
Unit
V
0.8
10
0.415
100
100
1.0
5.0
-40~125
-40~150
A
A
A2S
mW
mW
A
V
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Repetitive peak off-state
current
On-state voltage
Gate trigger current
Holding current
Latch Current
符号
测试条件
Symbol
Test Conditions
VD=Rated
IDRM,IRRM VDRM and VRRM
RGK=1KΩ
Tc =25℃
Tc=110℃
VTM ITM=1.0A peak @ TA=25℃
IGT
VAK=7.0Vdc
RL=100Ω
TC=25℃
VAK=7.0Vdc
Tc =25℃
IH
Initiating
Current=20mA
Tc =-40℃
IL
VAK=7.0V,
Ig=200μA
Tc =25℃
Tc =-40℃
最小值 典型值 最大值 单位
Min Typ Max Unit
10
μA
100
1.7 V
40 200 μA
0.5 5.0
mA
10
0.6 10
mA
15
Gate trigger voltage
VGT
VAK=7.0Vdc,
RL=100Ω
Tc =25℃
Tc =-40℃
0.62 0.8
1.2
V
Forward Voltage Application
Rate
dv/dt
VD=Rated VDRM
Exponential Waveform,
RGK=1KΩ
Tj=110℃
20 35
- V/us
Critical rate of rise of off-state
voltage
di/dt
IPK=20A
PW=10usec;
diG/dt=1A/usec IGT=20mA
50 A/us
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