파트넘버.co.kr VS-10RIA120 데이터시트 PDF


VS-10RIA120 반도체 회로 부품 판매점

Medium Power Phase Control Thyristors



Vishay 로고
Vishay
VS-10RIA120 데이터시트, 핀배열, 회로
www.vishay.com
VS-10RIA Series
Vishay Semiconductors
Medium Power Phase Control Thyristors
(Stud Version), 10 A
TO-208AA (TO-48)
PRODUCT SUMMARY
Package
TO-208AA (TO-48)
Diode variation
Single SCR
IT(AV)
VDRM/VRRM
10 A
100 V, 200 V, 400 V, 600 V, 800 V,
1000V, 1200 V
VTM 1.75 V
IGT 60 mA
TJ -65 °C to +125 °C
FEATURES
• Improved glass passivation for high reliability
and exceptional stability at high temperature
• High dIF/dt and dV/dt capabilities
• Standard package
• Low thermal resistance
• Metric threads version available
• Types up to 1200 V VDRM/VRRM
• Designed and qualified for industrial and consumer level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Medium power switching
• Phase control applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IT(RMS)
ITSM
I2t
VDRM/VRRM
tq
TJ
TC
50 Hz
60 Hz
50 Hz
60 Hz
Typical
VALUES
10
85
25
225
240
255
233
100 to 1200
110
-65 to +125
UNITS
A
°C
A
A
A2s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE PEAK VRSM, MAXIMUM NON-REPETITIVE
AND OFF-STATE VOLTAGE (1)
PEAK VOLTAGE (2)
VV
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
10 100
150 20
20 200
300
40 400
500
VS-10RIA
60
80
600
800
700
10
900
100 1000
1100
120 1200
1300
Notes
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
(2) For voltage pulses with tp 5 ms
Revision: 19-Nov-15
1 Document Number: 93689
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


VS-10RIA120 데이터시트, 핀배열, 회로
www.vishay.com
VS-10RIA Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
Maximum peak, one-cycle
non-repetitive surge current
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of
on-state slope resistance
High level value of
on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
I2t
VT(TO)1
VT(TO)2
rt1
rt2
VTM
IH
IL
TEST CONDITIONS
180° conduction, half sine wave
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ =TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
Ipk = 32 A, TJ = 25 °C, tp = 10 ms sine pulse
TJ = 25 °C, anode supply 12 V resistive load
VALUES
10
85
25
225
240
190
200
255
233
180
165
2550
1.10
1.39
24.3
16.7
1.75
130
200
UNITS
A
°C
A
A
A2s
A2s
V
m
V
mA
SWITCHING
PARAMETER
VDRM 600 V
Maximum rate of riseVDRM 800 V
of turned-on current VDRM 1000 V
VDRM 1600 V
Typical turn-on time
SYMBOL
dIF/dt
tgt
Typical reverse recovery time
trr
Typical turn-off time
tq
TEST CONDITIONS
TJ = TJ maximum, VDM = Rated VDRM
Gate pulse = 20 V, 15 , tp = 6 μs, tr = 0.1 μs maximum
ITM = (2 x rated dI/dt) A
TJ = 25 °C, at rated VDRM/VRRM, TJ = 125 °C
TJ = TJ maximum,
ITM = IT(AV), tp > 200 μs, dIF/dt = - 10 A/μs
TJ = TJ maximum, ITM = IT(AV), tp > 200 μs, VR = 100 V,
dIF/dt = - 10 A/μs, dV/dt = 20 V/μs linear to 67 % VDRM,
gate bias 0 V to 100 W
Note
• tq = 10 μs up to 600 V, tq = 30 μs up to 1600 V available on special request
VALUES
200
180
160
150
0.9
4
110
UNITS
A/μs
μs
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum critical rate of rise
of off-state voltage
dV/dt
TJ = TJ maximum linear to 100 % rated VDRM
TJ = TJ maximum linear to 67 % rated VDRM
Note
(1) Available with: dV/dt = 1000 V/μs, to complete code add S90 i.e. 10RIA120S90
VALUES
100
300 (1)
UNITS
V/μs
Revision: 19-Nov-15
2 Document Number: 93689
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




PDF 파일 내의 페이지 : 총 8 페이지

제조업체: Vishay

( vishay )

VS-10RIA120 thyristor

데이터시트 다운로드
:

[ VS-10RIA120.PDF ]

[ VS-10RIA120 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


VS-10RIA120

Medium Power Phase Control Thyristors - Vishay