파트넘버.co.kr S9227-03 데이터시트 PDF


S9227-03 반도체 회로 부품 판매점

CMOS linear image sensor



HAMAMATSU 로고
HAMAMATSU
S9227-03 데이터시트, 핀배열, 회로
CMOS linear image sensor
S9227-03
High-speed readout, simultaneous integration
The S9227-03 is a small CMOS linear image sensor designed for image input applications. Signal charge is integrated on all pixels
simultaneously and then read out at high speeds of 5 MHz.
Features
Pixel pitch: 12.5 μm
Pixel height: 250 μm
512 pixels
5 V single power supply operation
Video data rate: 5 MHz max.
Simultaneous charge integration
Shutter function
High sensitivity, low dark current, low noise
Built-in timing generator allows operation with only
start and clock pulse inputs.
Spectral response range: 400 to 1000 nm
8-pin DIP (16-pin surface mount type also available)
Applications
Position detection
Image reading
Absolute maximum ratings
Parameter
Supply voltage
Clock pulse voltage
Start pulse voltage
Operating temperature*1
Storage temperature*1
*1: No condensation
Symbol
Vdd
V(clk)
V(st)
Topr
Tstg
Mechanical specifications
Parameter
Number of pixels
Pixel pitch
Pixel height
Active area length
Window material
Package
Value
-0.3 to +6
-0.3 to +6
-0.3 to +6
-5 to +60
-10 to +70
Specification
512
12.5
250
6.4
TEMPAX
Ceramic
Unit
V
V
V
°C
°C
Unit
-
μm
μm
mm
-
-
Downloaded from Elcodis.com electronic components distributor
www.hamamatsu.com
1


S9227-03 데이터시트, 핀배열, 회로
CMOS linear image sensor
S9227-03
Recommended terminal voltage
Parameter
Supply voltage
Clock pulse voltage
Start pulse voltage
High level
Low level
High level
Low level
Symbol
Vdd
V(clk)
V(st)
Min.
4.75
Vdd - 0.25
-
Vdd - 0.25
-
Typ.
5
Vdd
0
Vdd
0
Max.
5.25
Vdd + 0.25
-
Vdd + 0.25
-
Unit
V
V
V
V
V
Electrical characteristics [Ta=25 °C, Vdd=5 V, V(clk)=V(st)=5 V]
Parameter
Clock pulse frequency
Video data rate
Power consumption
Conversion efciency
Output impedance*2
Symbol
f(clk)
VR
P
CE
Zo
Min.
50 k
-
100
-
-
Typ.
-
f(clk)
130
1.6
50
Max.
5M
-
160
-
200
Unit
Hz
Hz
mW
μV/e-
Ω
Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, V(clk)=V(st)=5 V]
Parameter
Symbol
Min.
Typ.
Max.
Unit
Spectral response range
λ
400 to 1000
nm
Peak sensitivity wavelength
λp - 700 - nm
Dark current
ID -
10 100 fA
Saturation charge
Qsat
320
420
- fC
Dark output voltage*3
Vd -
1 10 mV
Saturation output voltage*4
Vsat
4
4.3
-V
Readout noise
Nr - 1 2 mV rms
Offset output voltage
Vo -
0.6 0.9 V
Photo response non-uniformity*5 *6
PRNU
-5
- +5 %
*2: An increased current consumption at the video output terminal rises the sensor chip temperature causing an increased dark current.
Connect a buffer amplier for impedance conversion to the video output terminal so that the current ow is minimized.
Use a JFET or CMOS input, high-impedance input op amp as the buffer amplier.
*3: Integration time Ts=10 ms
*4: Voltage difference with respect to Vo, Ts=10 ms
*5: Uniformity is measured using 510 pixels excluding the pixels at both ends under the condition that the device is uniformly
illuminated by light which is 50% of the saturation level, and is dened as follows:
PRNU= ΔX/X × 100 (%)
X: the average output of all pixels, ΔX: difference between X and maximum or minimum output
*6: Measured with a tungsten lamp of 2856 K
Spectral response (typical example)
(Ta=25 °C)
100
80
60
40
20
0
400 500 600 700 800 900 1000 1100
Wavelength (nm)
KMPDB0230EC
Downloaded from Elcodis.com electronic components distributor
2




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S9227-03 sensor

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