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OSD35-5T 반도체 회로 부품 판매점

(OSDxx-5T) General Purpose Silicon Sensors



CENTRONIC 로고
CENTRONIC
OSD35-5T 데이터시트, 핀배열, 회로
General Purpose Silicon Sensors (Series 5T)
The Centronic Series 5T detectors offer high blue sensitivity coupled with high shunt
resistance and low dark leakage current. They are particularly suited to low light level
applications from 430-900 nm where the highest signal to noise ratio is important. They
may be operated photovoltaically or with a reverse bias of up to 12V where lower
capacitance is needed. The 5T range provides the most economic solution for all
applications where high speed of response above 800 nm is not critical.
Electrical / Optical Specifications
Characteristics measured at 22°C (±2) ambient, and a reverse bias of 12 volts, unless otherwise stated. Shunt
Resistance measured at ± 10mV.
For rise time on Quadrants, Linear and Matrix Arrays take figures for single element diodes having equivalent active
area
Single Elements
Type
No.
OSD1-5T
OSD3-5T
OSD5-5T
OSD7.5-5T
OSD15-5T
OSD35-5T
OSD50-5T
OSD60-5T
OSD100-5T
OSD300-5T
Active Area
mm2
mm
1
3
5
7.5
15
35
50
62
100
300
1.13 dia
2.16 x 1.4
2.52 dia
2.75 x 2.75
3.8 x 3.8
5.9 x 5.9
7.98 dia
7.9 x 7.9
11.3 dia
19.54 dia
Responsivity A/W
λ = 436 nm
Min.
Typ.
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.21
0.21
0.21
0.21
0.21
0.21
0.21
0.21
0.21
0.21
Dark Current (nA)
Max.
1
2
2
3
5
10
15
25
30
200
Typ.
0.2
0.5
0.5
1
1
2
5
6
8
30
NEP WHz
λ = 436 nm
Typ.
2.5e-14
3.0e-14
3.3e-14
4.6e-14
5.5e-14
7.5e-14
1.6e-13
2.3e-13
2.1e-13
3.5e-13
Capacitance pF
Vr=0 V
Max.
35
80
130
180
390
950
1300
1800
2500
7500
Vr=12V
Max.
7
20
35
40
80
200
270
310
520
1500
Shunt Resistance
Meg. ohms
Min.
Typ.
250 1000
100 700
100 600
60 300
50 200
20 100
5 25
3 12
2 15
15
Risetime ns
λ = 820 nm
RL = 50 Typ.
7
9
9
10
12
20
26
30
45
125
Package
1
1
3
3
3
8 / 23
9
9
13
15
Quadrants (Values given are per element unless otherwise stated)
Type
No.
QD7-5T
QD50-5T
QD100-5T
mm2
7
50
100
Active Area
(Total)
mm Sep. mm
2.99 dia
7.98 dia
11.3 dia
0.2
0.2
0.2
Responsivity A/W
λ = 436 nm
Min.
Typ.
0.18
0.18
0.15
0.21
0.21
0.18
Dark Current (nA)
Max.
Typ.
62
30 3
50 5
NEP WHz
λ = 436 nm
Typ.
2.3e-14
4.6e-14
7.0e-14
Capacitance pF
Vr=0 V Vr=12V
Max. Max.
50 15
330 80
650 130
Shunt Resistance
Meg. ohms
Min.
Typ.
80 1200
10 300
5 100
Crosstalk%
λ = 900 nm
Max. Typ.
51
51
51
Package
7
10
11
Linear Arrays (Values given are per element unless otherwise stated)
Type
No.
LD2A-5T
LD2B-5T
LD2C-5T
LD4C-5T
LD12A-5T
LD16C-5T
LD16(1.8)-5T
LD16(2.5)-5T
LD20-5T
LD20(0.36)-5T
LD35-5T
MD25-5T
No. of Elements
Array Dimensions
Responsivity Shunt Resistance NEP WHzCapacitance pF
A/W
Megohms
λ = 436 nm
λ = 436 nm
Area Width Lgth. Sep. Min. Typ.
mm2 mm mm mm
Min.
Typ.
Vr=0V Vr=12V
Min. Typ.
2
1.00 2.0 0.5 0.05 0.18 0.21
100
1000
2.5e-14
30
6
2
2.02 1.422 1.422 0.45 0.18 0.21
50
1000
2.5e-14
60
12
2
0.483 1.27 0.38 0.05 0.15 0.18
100
1000
2.9e-14
15
4
4
0.64 0.8 0.8 0.3 0.15 0.18
40
500
4.0e-14
38
10
12
0.25 0.5 0.5 0.05 0.15 0.18
100
2000
2.0e-14
10
3
16
0.035 0.2 0.175 0.025 0.15 0.18
100
2000
2.0e-14
10
2
16
1.8 2.1 0.9 0.1 0.18 0.21
100
1500
2.0e-14
60
11
16
2.5 2.5
1 0.5 0.18 0.21
100
1500
2.0e-14
80
14
20
3.60 4.0 0.90 0.05 0.18 0.21
100
1000
2.5e-14
130
20
20
0.36 0.6 0.6 0.1 0.18 0.21
100
2000
1.7e-14
15
5
35
4.42 4.6 0.96 0.03 0.18 0.21
40
2000
1.7e-14
130
25
Matrix Arrays (Values given are per element unless otherwise stated)
5x5
7.99 2.7 2.7 0.1 0.15 0.18
5
200
6.4e-14
240
47
Dark Current
nA
Max. Typ.
2 0.7
51
2 0.5
10 1
5 0.5
5 0.5
5 0.5
5 0.5
5 0.5
5 0.5
5 0.5
50 5
Package
4
4
2
6
21
20
16
16
16
16
17
18
Note: Recommended operating voltage range 0 to 12 volts, for all Series 5T Detectors.
Highlighted items are Centronic standard products generally available from stock
Free Datasheet http://www.datasheet4u.com/


OSD35-5T 데이터시트, 핀배열, 회로
Series 5T Spectral Response Graph
Capacitance versus Bias Voltage
Due to our policy of continued development, specifications are subject to change without notice.
Free Datasheet http://www.datasheet4u.com/




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OSD35-5T sensor

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