파트넘버.co.kr EE-SY124 데이터시트 PDF


EE-SY124 반도체 회로 부품 판매점

Photomicrosensor



Omron Electronics 로고
Omron Electronics
EE-SY124 데이터시트, 핀배열, 회로
www.DataSheet4U.com
EE-SY124
Dimensions
Note: All units are in millimeters unless otherwise indicated.
Unless otherwise specified, the
tolerances are ±0.15 mm.
Internal Circuit
KC
AE
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Photomicrosensor
(Reflective)
Features
Ultra-compact model with 1 mm sensing distance.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Rated
value
Emitter
Forward current IF
50 mA
(see note 1)
Pulse forward
current
IFP
1A
(see note 2)
Detector
Reverse voltage
Collector--Emitter
voltage
VR
VCEO
4V
30 V
Emitter--Collector
voltage
VECO
5V
Collector current IC
Collector
dissipation
PC
20 mA
75 mW
(see note 1)
Ambient
Operating
temperature
Topr --25°C to
85°C
Storage
Tstg --40°C to
100°C
Soldering temperature
Tsol 260°C
(see note 3)
Note:
1. Refer to the temperature rating chart if the ambient
temperature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency
of 100 Hz.
3. Complete soldering within 10 seconds.
Ordering Information
Photomicrosensor (Reflective)
Description
Part number
EE-SY124
Electrical and Optical Characteristics (Ta = 25°C)
Emitter
Detector
Item
Forward voltage
Reverse current
Peak emission wavelength
Light current
Symbol
VF
IR
λP
IL
Value
1.2 V typ., 1.4 V max.
0.01 µA typ., 10 µA max.
950 nm typ.
50 µA min., 300 µA max.
Condition
IF = 20 mA
VR = 4 V
IF = 4 mA
IF = 4 mA, VCE = 2 V
Aluminum-deposited surface,
d = 1 mm (see note)
Dark current
Leakage current
ID
ILEAK
2 nA typ., 200 nA max.
200 nA max.
VCE = 10 V, 0 x
IF =4 mA, VCE = 2 V with no
reflection
Collector--Emitter saturated
voltage
VCE (sat)
---
---
Peak spectral sensitivity
wavelength
λP
930 nm typ.
VCE = 10 V
Rising time
tr 35 µs typ.
VCC = 2 V, RL = 1 k, IL = 100 µA
Falling time
tf 25 µs typ.
VCC = 2 V, RL = 1 k, IL = 100 µA
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.


EE-SY124 데이터시트, 핀배열, 회로
EE-SY124
Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
EE-SY124
Light Current vs. Forward Current
Characteristics (Typical)
Ta = 25°C
VCE = 2 V
d = 1 mm
Sensing object:
Aluminum-deposited
surface
Light Current vs. Collector--Emitter
Voltage Characteristics (Typical)
Ta = 25°C
d = 1 mm
Sensing object:
Aluminum-deposited
surface
Ambient temperature Ta (°C)
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
Forward current IF (mA)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Collector--Emitter voltage VCE (V)
Response Time vs. Load Resistance
Characteristics (Typical)
Ambient temperature Ta (°C)
Response Time vs. Load Resistance
Characteristics (Typical)
Ambient temperature Ta (°C)
Sensing Distance Characteristics
(Typical)
TA = 25°C
IF = 4 mA
VCE = 2 V
d = 1 mm
Sensing object:
Aluminum-deposited
surface
Light current IL (µA)
Relative Light Current vs.
Card Moving Distance (1)
Light current IL (µA)
Relative Collector Current vs.
Card Moving Distance (2)
Card moving distance L (mm)
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
Card moving distance L (mm)




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EE-SY124 sensor

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Photomicrosensor - Omron Electronics