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PDF BD9G101G Data sheet ( Hoja de datos )
| Número de pieza | BD9G101G | |
| Descripción | Simple Step-down Switching Regulators | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Datasheet
Single-chip Type with Built-in FET Switching Regulators
Simple Step-down
Switching Regulators
with Built-in Power MOSFET
BD9G101G
●General Description
The BD9G101G is switching regulator with integrated
internal high-side 42V Power MOSFET.
It provides 0.5A DC output with small SOT-23 package.
Operating frequency is fixed 1.5MHz, allowing the use
of small inductor and ceramic capacitor.
The components of phase compensation is built in.
The BD9G101G is available in SOT-23-6(SSOP6)
package.
●Features
■ High and Wide Input Range (VCC=6V~42V)
■ 45V/800mΩ Internal Power MOSFET
■ 1.5MHz Fixed Operating Frequency
■ Feedback Pin Voltage 0.75V±1.5%
■ Internal compensated
■ Internal Over Current protection, Under
Voltage Locked Out, Thermal shutdown
■ 0μA Shutdown Supply Current
■ 6-Lead SOT-23 package(SSOP6)
●Typical Application Circuits
15000pF
●Key Specifications
■ Input Voltage
■ Ref. Precision (Ta=25℃)
(Ta=-25~105℃)
■ Max Output Current
■ Operating Temperature
■ Max Junction Temperature
6～42 [V]
±1.5[%]
±2.0[%]
0.5 [A] (Max.)
-40℃~105℃
150℃
●Packages
SSOP6
2.90 ㎜×2.80 ㎜×1.25 ㎜
SSOP6
●Applications
■ Industrial distributed power applications
■ Automotive Applications
■ Battery powered equipment
■ OA instruments
680Ω
0.1μF
3.9k
BST Lx
GND VCC
FB EN
L1: 6.8μH
D1 C2:10μF/25V
VCC
C1:4.7μF/50V
ON/OFF control
5V/0.5A
Figure 1. Typical Application Circuit
○Structure：Silicon Monolithic Integrated Circuit ○This product is not designed for normal operation with in a radioactive.
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
1/23
TSZ02201-0Q1Q0AJ00150-1-2
16.Feb.2015 Rev.006
1 page  
BD9G101G
●Operating Ratings
Item Symbol
Min
Input Voltage
Output Voltage
VCC
VOUT
6
1.0(*2)
Output Current
IOUT
-
(*2)Restricted by minimum on pulse typ. 100nsec
(*3)Restricted by maxduty ,Ron and BST-UVLO.
Ratings
Typ Max
- 42
- VCC×0.7(*3)
- 500
Unit
V
V
mA
●input and output voltage restriction
The input voltage range of BD9G101G is limited by Ron, Maxduty(min85%) and preventing malfunction at low voltage
between BST and LX(BST-UVLO).
①BST-UVLO
BSTUVLO is the function that prevent the IC from abnormal operation that is caused by shortage of charge of High-SideFET
driving. If the voltage between BST and Lx is lower than 1.5V, High-Side FET is turned off and there are new pass to charge
voltage VCC to BST. BST voltage is charged by Vcc and goes over BST-UVLO threshold. As a result , BST-UVLO is turned
off.
The condition that BST-UVLO is working property is
VCC>>(BST-UVLO threshold + Vf )+ Vout.
Therefore maximum output voltage is lower than Vin -3V.
BST charging current (normal mode)
4.2V
BST
BSTUVLO
BST charging current
(BST-UVLO mode)
VCC
NchFET OFF
(BST-UVLO mode)
LX
Figure 4. BST-UVLO image
※When operation can be considered by Vin-Vout<3V, output voltage leaps up to near input voltage by BSTUVLO operation at
the time of a light load.
The waveform of operation and a mechanism are shown.
Vout 1v/div
Figure 5. BSTUVLO operation waveform
Vout=5V Vin=7V Iout=0mA
①BSTUVLO detection →Nch MOS FET is turned OFF
↓
②Vout、Lx are discharged
⇒ErrorAMP output is raised
↓
③ The voltage between BST-Lx is secured enough
→BSTUVLO release
↓
④ In order to carry out a start of operation with Max Duty
cycle, an output leaps up.
↓
⑤ The voltage between BST-Lx is insufficient.
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
5/23
TSZ02201-0Q1Q0AJ00140-1-2
16.Feb.2015 Rev.006
5 Page 
BD9G101G
EN 10V/div
Lx
10V/div
IOUT 0.2A/div
VOUT
1V/div
Figure 21. Start-up Characteristics
VIN=8V, IOUT=0mA ,VOUT=5V
EN 20V/div
Lx
10V/div
VOUT
1V/div
IOUT 0.2A/div
Figure 23. Start-up Characteristics
VIN=12V, IOUT=0mA, VOUT=5V
EN 10V/div
Lx
10V/div
VOUT
1V/div
IOUT 0.2A/div
Figure 25. Start-up Characteristics
VIN=42V, IOUT=0mA, VOUT=5V
EN 10V/div
Lx
10V/div
VOUT
1V/div
IOUT 0.2A/div
Figure 22. Start-up Characteristics
VIN=8V, IOUT=500mA, VOUT=5V
EN 20V/div
Lx
10V/div
VOUT
1V/div
IOUT 0.2A/div
Figure 24. Start-up Characteristics
VIN=12V, IOUT=500mA ,VOUT=5V
EN 10V/div
Lx
10V/div
VOUT
1V/div
IOUT 0.2A/div
Figure 26. tart-up Characteristics
VIN=42V, IOUT=500mA, VOUT=5V
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
11/23
TSZ02201-0Q1Q0AJ00140-1-2
16.Feb.2015 Rev.006
11 Page | ||
| Páginas | Total 26 Páginas | |
| PDF Descargar | [ Datasheet BD9G101G.PDF ] | |
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