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PDF BD9104FVM Data sheet ( Hoja de datos )
| Número de pieza | BD9104FVM | |
| Descripción | (BD9102FVM / BD9104FVM / BD9106FVM) Output 1.5A or Less High Efficiency Step-down Switching Regulators | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Single-chip built-in FET type Switching Regulator Series
Output 1.5A or Less High Efficiency
Step-down Switching Regulators
with Built-in Power MOSFET
BD9102FVM, BD9104FVM, BD9106FVM
No.09027EAT34
●Description
ROHM’s high efficiency step-down switching regulator (BD9102FVM, BD9104FVM, BD9106FVM) is a power supply
designed to produce a low voltage including 1.24 volts from 5 volts power supply line. Offers high efficiency with our
original pulse skip control technology and synchronous rectifier. Employs a current mode control system to provide faster
transient response to sudden change in load.
●Features
1) Offers fast transient response with current mode PWM control system.
2) Offers highly efficiency for all load range with synchronous rectifier (Nch/Pch FET)
and SLLMTM (Simple Light Load Mode)
3) Incorporates soft-start function.
4) Incorporates thermal protection and ULVO functions.
5) Incorporates short-current protection circuit with time delay function.
6) Incorporates shutdown function
7) Employs small surface mount package MSOP8
●Use
Power supply for HDD, power supply for portable electronic devices like PDA, and power supply for LSI including CPU and
ASIC
www.DataSheet.co.kr
●Lineup
Parameter
Vcc voltage
Output voltage
Output current
UVLO Threshold voltage
Short-current protection with time delay function
Soft start function
Standby current
Operating temperature range
Package
BD9102FVM
4.0～5.5V
1.24V±2%
0.8A Max.
2.7V Typ.
built-in
built-in
0μA Typ.
-25～+85℃
MSOP8
BD9104FVM
4.5～5.5V
3.30V±2%
0.9A Max.
4.1V Typ.
built-in
built-in
0μA Typ.
-25～+85℃
MSOP8
BD9106FVM
4.0～5.5V
Adjustable(1.0～2.5V)
0.8A Max.
3.4V Typ.
built-in
built-in
0μA Typ.
-25～+85℃
MSOP8
●Absolute Maximum Rating (Ta=25℃)
VCC voltage
PVCC voltage
Parameter
Symbol
VCC
PVCC
Limits
-0.3～+7 *1
-0.3～+7 *1
EN voltage
EN -0.3～+7
SW,ITH voltage
Power dissipation 1
Power dissipation 2
SW,ITH
Pd1
Pd2
-0.3～+7
387.5*2
587.4*3
Operating temperature range
Topr -25～+85
Storage temperature range
Tstg -55～+150
Maximum junction temperature
Tjmax
+150
*1 Pd should not be exceeded.
*2 Derating in done 3.1mW/℃ for temperatures above Ta=25℃.
*3 Derating in done 4.7mW/℃ for temperatures above Ta=25℃,Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB
Unit
V
V
V
V
mW
mW
℃
℃
℃
www.rohm.com
© 2009 ROHM Co., Ltd. All rights reserved.
1/17
2009.05 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
BD9102FVM, BD9104FVM, BD9106FVM
■SW waveform IO=10mA
[BD9102FVM]
SW SW
[BD9104FVM]
VOUT
VCC=5V
Ta=25℃
Fig.13 SW waveform
Io=10mA(SLLMTM control)
■SW waveform IO=200mA
[BD9102FVM]
SW
VOUT
VCC=5V
Ta=25℃
Fig.14 SW waveform
Io=10mA(SLLMTM control)
[BD9104FVM]
SW
VOUT
VCC=5V
Ta=25℃
Fig.16 SW waveform
Io=200mA(PWM control)
VOUT
VCC=5V
Ta=25℃
Fig.17 SW waveform
Io=200mA(PWM control)
■Transient response IO=100mA → 600mA
VOUT
[BD9102FVM]
VOUT
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[BD9104FVM]
IOUT
VCC=5V
Ta=25℃
Fig.19 Transient response
Io=100→600mA(10μs)
IOUT
VCC=5V
Ta=25℃
Fig.20 Transient response
Io=100→600mA(10μs)
■Transient response IO=600mA → 100mA
[BD9102FVM]
VOUT
VOUT
[BD9104FVM]
IOUT
VCC=5V
Ta=25℃
Fig.22 Transient response
Io=600→100mA(10μs)
IOUT
VCC=5V
Ta=25℃
Fig.23 Transient response
Io=600→100mA(10μs)
www.rohm.com
© 2009 ROHM Co., Ltd. All rights reserved.
5/17
Technical Note
[BD9106FVM]
SW
VOUT
VCC=5V
Ta=25℃
Fig.15 SW waveform
Io=10mA(SLLMTM control
[BD9106FVM]
SW
VOUT
VCC=5V
Ta=25℃
Fig.18 SW waveform
Io=200mA(PWM control VOUT=1.8V)
VOUT
[BD9106FVM]
IOUT
VCC=5V
Ta=25℃
Fig.21 Transient response
Io=100→600mA(10μs)
(VOUT=1.8V)
VOUT
[BD9106FVM]
IOUT
VCC=5V
Ta=25℃
Fig.24 Transient response
Io=600→100mA(10μs)
(VOUT=1.8V)
2009.05 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
5 Page 
BD9102FVM, BD9104FVM, BD9106FVM
Technical Note
●Switching regulator efficiency
Efficiency ŋ may be expressed by the equation shown below:
η= VOUT×IOUT ×100[%]= POUT ×100[%]=
Vin×Iin
Pin
POUT
POUT+PDα
×100[%]
Efficiency may be improved by reducing the switching regulator power dissipation factors PDα as follows:
Dissipation factors:
1) ON resistance dissipation of inductor and FET：PD(I2R)
2) Gate charge/discharge dissipation：PD(Gate)
3) Switching dissipation：PD(SW)
4) ESR dissipation of capacitor：PD(ESR)
5) Operating current dissipation of IC：PD(IC)
1)PD(I2R)=IOUT2×(RCOIL×RON) (RCOIL[Ω]：DC resistance of inductor, RON[Ω]：ON resistance of FET
IOUT[A]：Output current.)
2)PD(Gate)=Cgs×f×V (Cgs[F]：Gate capacitance of FET,f[H]：Switching frequency,V[V]：Gate driving voltage of FET)
3)PD(SW)= Vin2×CRSS×IOUT×f
IDRIVE
(CRSS[F]：Reverse transfer capacitance of FET,IDRIVE[A]：Peak current of gate.)
4)PD(ESR)=IRMS2×ESR (IRMS[A]：Ripple current of capacitor,ESR[Ω]：Equivalent series resistance.)
5)PD(IC)=Vin×ICC (ICC[A]：Circuit current.)
●Consideration on permissible dissipation and heat generation
As this IC functions with high efficiency without significant heat generation in most applications, no special consideration is
needed on permissible dissipation or heat generation. In case of extreme conditions, however, including lower input
voltage, higher output voltage, heavier load, and/or higher temperature, the permissible dissipation and/or heat generation
must be carefully considered.
For dissipation, only conduction losses due to DC resistance of inductor and ON resistance of FET are considered.
Because the conduction losses are considered to play the leading role among other dissipation mentioned above including
gate charge/discharge dissipation and switching dissipation.
P=IOUT2×(RCOIL+RON)
RON=D×RONP+(1-D)RONN
D：ON duty (=VOUT/VCC)
RCOIL：DC resistance of coil
RONP：ON resistance of P-channel MOS FET
RONN：ON resistance of N-channel MOS FET
IOUT：Output current
www.DataSheet.co.kr
If VCC=5V, VOUT=3.3V, RCOIL=0.15Ω, RONP=0.35Ω, RONN=0.25Ω
IOUT=0.8A, for example,
D=VOUT/VCC=3.3/5=0.66
RON=0.66×0.35+(1-0.66)×0.25
=0.231+0.085
=0.316[Ω]
P=0.82×(0.15+0.316)
≒298[mV]
1000
800
①587.4mW
600
①using an IC alone
θj-a=322.6℃/W
②mounted on glass epoxy PCB
θj-a=212.8℃/W
②387.5mW
400
200
0 Ambient temperature:Ta [℃]
0 25 50 75 85 100 125 150
Fig.49 Thermal derating curves
As RONP is greater than RONN in this IC, the dissipation increases as the ON duty becomes greater. With the consideration
on the dissipation as above, thermal design must be carried out with sufficient margin allowed.
www.rohm.com
© 2009 ROHM Co., Ltd. All rights reserved.
11/17
2009.05 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet BD9104FVM.PDF ] | |
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