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IXYS Corporation |
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Switchable Current
Regulators
IXCP 10M45S
IXCY 10M45S
VAK = 450 V
IA(P) = 2 - 100 mA
RDYN = 9 - 900 kΩ
Symbol
VAKR
VAGR
VGK
ID
PD
TJ
Tstg
TL
MD
Test Condition
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C
10M35S
10M35S
450 V
450 V
±20 V
TC = 25°C
TC = 25°C
Temperature for Soldering (max. 10 s)
-0.3
40
-55 ... +150
-55 ... +150
260
A
W
°C
°C
°C
Mounting torque with screw M3 (TO-220)
with screw M3.5 (TO-220)
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
TO-220 AB (IXCP)
TO-252 AA
(IXCY)
G
GA K
A
A
K
Pin connections
1 = G, Control terminal;
2 and 4 = A (+) Positive terminal
3 = K (-), Negative terminal
Symbol
VAKR
IA(P)
VG(off)
IAV
∆VAK/∆ IA(p
RthJC
RthJA
Test Condition
Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
RK = 300 Ω, (Fig. 4) 10M35S
VD = 10 V; RK = 300 Ω; (Fig. 5)
ID = 100 µA; VD = 400 V 10M45S
Fig. 4
VD= 400 V; VGK = -10 V 10M45S
Fig. 4
450
7 10
-5
V
15 mA
V
25 µA
Dynamic resistance; VD= 10 V
RK = 300 Ω; (Fig. 4)
160
Thermal Resistance junction-to-case
Thermal Resistance junction-to-ambient TO-220
TO-252
kΩ
3.1 K/W
80 K/W
100 K/W
Features
z Minimum of 350/450 V
breakdown
z Resistor programmable current
source
z 40 W continuous dissipation
z International standard packages
JEDEC TO-220 and TO-252
z On/Off switchable current source
Applications
z Start-up circuits for SMPS
z Highly stable voltage sources
z Surge limiters and voltage protection
z Instantaneously reacting resetable
fuses
z Soft start-up circuits
© 2004 IXYS All rights reserved
DS98704(07/04)
A (+)
ID(p)
G VD
K (-)
RK
Fig. 1 Resistor RK in series with negative pin
to achieve different current levels
100
IXCP 10M45S
IXCY 10M45S
TO-220 AB Outline
10
1
10 100 1000
Series Resistor RK - Ohms
Fig. 2. Plateau current versus external resistance
10000
TO-252 AA Outline
A (+)
G
ID(p)
VD
VGK K (-)
Fig. 3. Current regulator controlled by VG
1000
100
10
1
0.1
-3.5 -3.0 -2.5 -2.0 -1.5 -1.0
VGS - Volts
Fig. 4. Plateau current versus applied input voltage
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
Dim. Millimeter Inches
Min. Max. Min. Max.
A 2.19 2.38 0.086 0.094
A1 0.89 1.14 0.035 0.045
A2 0 0.13
0 0.005
b 0.64 0.89 0.025 0.035
b1 0.76 1.14 0.030 0.045
b2 5.21 5.46 0.205 0.215
c 0.46 0.58 0.018 0.023
c1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 4.32 5.21 0.170 0.205
E 6.35 6.73 0.250 0.265
E1 4.32 5.21 0.170 0.205
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
H 9.40 10.42 0.370 0.410
L 0.51 1.02 0.020 0.040
L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 2.54 2.92 0.100 0.115
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
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