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PDF VT1165M Data sheet ( Hoja de datos )
| Número de pieza | VT1165M | |
| Descripción | MULTIPHASE SWITCHING REGULATOR | |
| Fabricantes | Volterra Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de VT1165M (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
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Vendor PN:VT1165MFQX
PRELIMINARY
VT1165M CHIPSET
REVISION - December 8, 2005
PROGRAMMABLE OUTPUT, MULTIPHASE SWITCHING
REGULATOR WITH SMBus
Smart Current Input
Slave™ Rating Voltage
VT1105S* 25A per
VT1125S Phase
10.8V to
VT1115S 30A per 13.2V
VT1135S Phase
Output
Voltage
0.800V
to
1.850V
or
0.450V
to
2.0375V
VID
VRMs 9,
10.X, and
Opteron™ or
Serial VID
(SVID) Mode
GENERAL DESCRIPTION
The VT1165M chipset, Volterra’s fourth-generation chipset,
is a complete, integrated, scalable architecture for the high-
est density multi-phase synchronous buck regulators. This
ultra high density solution minimizes external components
and offers enhanced regulator performance, comprehensive
control and reporting features, ease of design and the smallest
footprint available for demanding multi-phase synchronous
buck converters. The chipset is targeted for applications
such as servers and networking systems.
The VT1165M system architecture consists of a master con-
troller (VT1165M), multiple Smart Slave™ integrated output
devices, input capacitors, output capacitors and output induc-
tors. The actual number of Smart Slaves™ can be set by the
designer and application requirements. The desired slave
and load operating conditions are controlled and monitored
via an interconnecting digital bus as shown in Figure 1.
With this chipset, Volterra implements enhancements to
the digital SMBus interface for monitoring and controlling
of the voltage regulator. Regulator parameters can be set and
monitored via the two-way SMBus for control, protection and
shutdown of the regulator. The SMBus can provide a reading
of faults such as VX short-circuit or slave over-temperature,
so that the regulator can be controlled and protected dur-
ing all operating conditions. The SMBus can also provide
temperature readings of individual slaves.
A key benefit of the VT1165M is that it provides excellent
scalability. This flexibility allows the designer to trade-off cost
and performance for a given application using one VT1165M
controller and different slave configurations with no redesign
or re-layout. The number of phases can be determined by
the designer and easily populated or de-populated to meet
different load and performance targets.
KEY FEATURES
• Smallest Footprint: Typical Solution Occupies Less
than 1600mm2 in a 150A VRM Application
• Lowest Profile: 5mm Maximum Height
• Highest Accuracy Current Sharing
• Differential Voltage Sense at Point of Load
• 1A/ns Step Load Transient Response
• Scalable Output Current: Up to 8 Slaves
• Slave Temperature Reporting
• Compatible with Coupled Inductors
• Programmable Switching Frequency: 500kHz-
1.5MHz
• 6-Bit VID Input, with 12.5mV Steps and Setpoint
Trim for Programmable VOUT
– Intel® VRM 9: 1.100V-1.850V
– Intel® VRM 10.X: 0.8375V-1.6000V
– AMD® Opteron™: 0.800V-1.550V
– Serial VID (SVID) Mode: 0.450V-2.0375V
• Dynamic VID
• Programmable VID via SMBUS
• Programmable Setpoint and Droop
• Programmable OVP, OVLO and UVLO
• Cycle-by-Cycle Current Limiting
• Power Good Flag, Fault Flag and Output Enable
SYSTEMS
• Servers and Workstations
• Enterprise Storage
• Broadband Communication & Networking
• Small Form Factor Desktops
APPLICATIONS
Voltage Regulator Modules (VRMs) and On-Board
Regulators (VR Down)
• Microprocessors (µP): 32 and 64 Bit I/A and RISC
Architectures
• Memory
• Graphics Processors
• Network, Chipset ICs
BASIC APPLICATION CIRCUIT
3.3V
SMBus
VT1165M
Master
Digital
Control Bus
3.3V 12V
VT11x5S VX1
Slave 1
LOUT1
3.3V 12V
VT11x5S VX2
Slave 2
LOUT2
COUT
VOUT
*NOTE: The VT1165M, VT1115S, VT1125S & VT1135S have
a status of PRELIMINARY. The VT1105S has a
status of NEW PRODUCT. See the back page of
this datasheet for details on these statuses.
Volterra Semiconductor Corp. Proprietary. Do Not Copy. Do Not Distribute.
3.3V 12V
VT11x5S VXN
Slave N
LOUTN
Figure 1. VT1165M System Architecture
1
1 page  
PROPRIETARY AND CONFIDENTIAL
PRELIMINARY VT1165M CHIPSET
PROGRAMMABLE OUTPUT, MULTIPHASE SWITCHING REGULATOR WITH SMBus
ELECTRICAL CHARACTERISTICS (CONTINUED)
Symbol
Parameter
Conditions
Min Typ Max Units
PWRGD and FAULTB Pins
- PWRGD DC Threshold Error
-
Delay from VOUT to PWRGD
After Startup
- PWRGD Lockout after OE goes High
(UVLO & OVLO Low)
-40 +40 mV
8 20 µs
1.6 2.0 2.4 ms
VOL
ISINK
OVP
Output Low Voltage
@ ISINK
Current Sinking (PWRGD, FAULTB) VOL = 0.4V
0.4 V
2.5 mA
- DC Threshold Error
-40 +40 mV
- OVP Lockout OE goes High (UVLO &
OVLO Low)
1.6 2.0 2.4 ms
OCP
IOCP
ISC-PK
-
OCP Inception Point
Peak Current for Short Circuit
Hiccup Period
Refer to Table 1C (IOCP for all IMAX settings)
Refer to Table 1D (ISC-PK for all IMAX settings)
46 50 54 ms
- Hiccup Duty Cycle
10 %
- Latch Off Delay
4.5 5.0 5.5 ms
Undervoltage and Overvoltage Lockout 12V Supply
IN_UVLORE
12V UVLO Reference Voltage Rising
Edge
1.262 1.300 1.338 V
IN_UVLOFE
12V UVLO Reference Voltage Falling
Edge
1.191 1.230 1.269 V
IN_UVLOHYSTERESIS
UVLO Hysteresis
IN_OVLORE
12V OVLO Reference Voltage Rising
Edge
IN_OVLOFE
12V OVLO Reference Voltage Falling
Edge
IN_OVLOHYSTERESIS
OVLO Hysteresis
tUVLO,
tOVLO
12V UVLO and OVLO Response
Time
Including time to shut
down the slave
tUVLO-REC,
tOVLO-REC
12V UVLO and OVLO Recovery Time Not including soft-
start delay
Undervoltage Lockout 3.3V Supply (Master-Internal)
30 67
mV
1.262 1.300 1.338 V
1.191 1.230 1.269 V
30 67
7.25
mV
µs
7.25 µs
3_3V_UVLO
3.3V Internal UVLO
Rising Threshold
2.85 V
Falling Threshold
2.69
V
3_3V_UVLOHYSTERESIS Hysteresis
Slave FAULTB Ball (VT1115S, VT1125S, VT1135S)
VOL-FAULTB
FAULTB Output Low Voltage
RPULLDOWN-FAULTB
SMBus Reporting
FAULTB Pull-down Resistance
With 4.7kΩ external
pull-up
100 mV
0.1 0.4
50 200
V
Ω
-
SPHASE
SMBus Current Reporting Error
-10 +10 % of
IMAX
-
SPHASE Clock Period Tolerance
Including 1% Resistor ✻ -6
+6 %
Tolerance
REVISED - 12/08/05
Volterra Semiconductor Corp. Proprietary. Do Not Copy. Do Not Distribute. 5
5 Page 
PROPRIETARY AND CONFIDENTIAL
PRELIMINARY VT1165M CHIPSET
PROGRAMMABLE OUTPUT, MULTIPHASE SWITCHING REGULATOR WITH SMBus
VT1105S (CSP-52) PINOUT
123456
A
BST
VDDH VDDH VDDH VDDH VDDH
B
VX VX VX VX VX VX
C
VSS
VSS
VSS
VSS
VSS
VSS
D
VX VX VX VX VX VX
E
VSS
VSS
VSS
VSS
VSS
VSS
F
VX VX VX VX VX VX
G
VSS
VSS
VSS
VSS
VSS
VSS
H
VCC
VDD
GND SPHASE
J
VDD IDES_N IDES_P GND DBI DBO
6 5 4 3 21
A
VDDH
VDDH
VDDH
VDDH
VDDH
BST
B
VX VX VX VX VX VX
C
VSS
VSS
VSS
VSS
VSS
VSS
D
VX VX VX VX VX VX
E
VSS
VSS
VSS
VSS
VSS
VSS
F
VX VX VX VX VX VX
G
VSS
VSS
VSS
VSS
VSS
VSS
H
SPHASE
GND
VDD
VCC
J
DBO DBI GND IDES_P IDES_N VDD
Top View
Bottom View-Ball Side Up
PIN INFORMATION FOR VT1105S SMART
SLAVE™
BST (Ball A1): Bootstrap supply for high side drivers.
VDDH (Balls A2-A6): 12V input supply voltage node. These
balls connect to the 12V input power supply source.
VX (Balls B1-B6, D1-D6, F1-F6): Switching node. These
balls connect the switching node of the power devices to
the output inductor.
VSS (Balls C1-C6, E1-E6, G1-G6): Power FETs ground node.
These balls connect directly to the ground plane.
VCC (Ball H1): 3.3V supply for low side drivers.
VDD (Balls H2, J1): 3.3V supply for control circuits.
GND (Balls H5, J4): Ground for control circuits.
SPHASE (Ball H6): SPHASE clock input from VT1165M
master controller.
IDES_N (Ball J2): Negative input side of differential desired
current signal.
IDES_P (Ball J3): Positive input side of differential desired
current signal.
DBI (Ball J5): Digital control bus input.
DBO (Ball J6): Digital control bus output.
REVISED - 12/08/05
Volterra Semiconductor Corp. Proprietary. Do Not Copy. Do Not Distribute. 11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet VT1165M.PDF ] | |
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