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ROHM Semiconductor |
High Performance Switching Regulator Series
60V Synchronous Step-down
Switching Regulator(Controller type)
BD9610AMUV
●General Description
The BD9610AMUV is a family of high resistance and
wide-input voltage (10V to 56V), synchronous,
step-down switching regulator. BD9610AMUV offers
design flexibility with a variety of user-programmable
functions, including soft-start, operating frequency,
high-side current limit, and loop compensation.
BD9610AMUV uses the pulse-width modulation
method of the voltage mode, and drives 2 external
Nch-FETs. The externally programmable current limit
provides pulse-by-pulse current limit, as well as
hiccup mode operation utilizing an internal fault
counter for longer duration overloads.BD9610AMUV
is safe for pre-biased outputs, not turning on the
synchronous rectifier until the high-side FET has
already started switching
●Features
■ High Resistance and Wide Range Input
Voltage :VCC=10V~56V
■ Internal Outside FET Gate Driver:REG10=10V
■ 0.8V±1.0% Reference Voltage Accuracy
■ Safe for Pre-biased Outputs
■ Adjustable Oscillating Frequency and Soft-Start
■ Master/Slave Synchronize Function
■ Over Current Protection (OCP)
■ Under Voltage Locked Output(UVLO)
■ Thermal Shut-down(TSD)
●Key Specifications
■ Input Supply Voltage
■ Output Voltage
■ Reference Voltage Accuracy
■ Gate Drive Voltage(REG10)
■ Frequency
10~56 [V]
1.0~(Vin×0.8) [V]
±1.0 [%]
9~11 [V]
50~500 [kHz]
●Package
VQFN020V4040
4.00 ㎜×4.00 ㎜×1.00 ㎜
●Applications
■ Amusement machines
■ FA Equipments
■ OA Equipments
■ LED Lighting Equipments
■ General Equipments used 24V,48V Bus line
●Typical Application Circuit
Vo
140kΩ
10kΩ
FB
1kΩ 11kΩ
180pF 4700pF
INV
SS
0.01μF
REG5
0.1μF
RTSS
0.01μF
RT
75kΩ
SYNC
CLKOUT
ON/OFF 1μF
CTL
VCC
CLH
CLL
RCL
20kΩ
BST
10μF×4
5mΩ
VIN
VIN
=15-56V
HG
BD9610AMUV
0.47μF
LX
REG10
Nch
SUD23N06-31L
(Vishay Siliconix)
Vo
10μF×4
VOUT
=12V
5μH
(DCR=3mΩ)
220μF
LG
1μF
Nch
SUD23N06-31L
(Vishay Siliconix)
●A Type of Efficiency
η=95%
(Vin=34V,Io=10A,fosc=250kHz)
100
90
80
70
60 Vin=34V,Vo=12V
50
0 5 10 15
Iout [A]
GND
PGND
○STRUCURE:Silicon Monolithic Integrated Circuit ○Not designed to withstand radiation.
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
1/27
TSZ02201-0Q1Q0AJ00010-1-2
24.OCT.2014 Rev.002
BD9610AMUV
●Pin Configuration
15 14
13 12
11
16 10
17 9
18
Thermal Pad (*)
8
19 7
20 6
12
34
5
(*) Recommend connecting Thermal Pad to GND
for increasing radiation characteristic.
●Block Diagram
●Pin Description
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Pin Name
GND
SS
INV
FB
RCL
RT
RTSS
CLKOUT
PGND
SYNC
LG
REG10
LX
HG
BST
CLL
CLH
VCC
CTL
REG5
Description
GROUND
Soft-start programming
Inverting input to the error amplifier
Output of the error amplifier
Current limit programming
Frequency programming
Reference of the RT voltage
Output of Internal clock pulse
GROUND
Syncronization input for the device
Gate drive for low-side N-channel FET
Output of 10V regulator for gate drive
This pin is connected to the switched node of the converter
Gate drive for high-side N-channel FET
Gate drive voltage for the high side N-channel FET
Inverting input to current detector
Input to current detector
Power supply
Shutdown pin
Output of 5V regulator for internal circuit
CTL
FB
INV
SS
REG5
stb
REG5
REG5
ERR
0.8V±1%
VCC
REG5
5V
REG
stb
VCC
VCC
UVLO
(VCC,REG5,
REG10)
TSD
uvlo
ocp
tsd
REG5
Pulse by pulse
Hiccup
After 2count
stb
ocp
uvlo REG5
tsd
OCP
PWM
LOGIC
DRV
uvlo
Low-side
Min. ON
REG5
VCC
OSC
(Internal/Synchronize)
stb 10V
REG
DRV
CLH
CLL
RCL
BST
HG
LX
REG10
LG
GND
RTSS RT SYNC
CLKOUT PGND
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
2/27
TSZ02201-0Q1Q0AJ00010-1-2
24.OCT.2014 Rev.002
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