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VS-MBR2090CT-1PbF 반도체 회로 부품 판매점

Schottky Rectifier ( Diode )



Vishay 로고
Vishay
VS-MBR2090CT-1PbF 데이터시트, 핀배열, 회로
VS-MBRB20...CTPbF, VS-MBR20...CT-1PbF Series
Vishay High Power Products
Schottky Rectifier, 2 x 10 A
VS-MBRB20...CTPbF
VS-MBR20 ...CT-1PbF
Base
common
cathode
2
Base
common
cathode
2
2
1 Common 3
Anode cathode Anode
D2PAK
2
1 Common 3
Anode cathode Anode
TO-262
PRODUCT SUMMARY
IF(AV)
VR
2 x 10 A
80 V to 100 V
FEATURES
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• Center tap D2PAK and TO-262 packages
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
DESCRIPTION
This center tap Schottky rectifier has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform (per device)
IFRM TC = 133 °C (per leg)
VRRM
IFSM
tp = 5 μs sine
VF 10 Apk, TJ = 125 °C
TJ Range
VALUES
20
20
80 to 100
850
0.70
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-MBRB2080CTPbF VS-MBRB2090CTPbF VS-MBRB20100CTPbF
VS-MBR2080CT-1PbF VS-MBR2090CT-1PbF VS-MBR20100CT-1PbF
80 90 100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
per leg
per device
IF(AV)
Peak repetitive forward current per leg
IFRM
Non-repetitive peak surge current
IFSM
Peak repetitive reverse surge current
Non-repetitive avalanche energy per leg
IRRM
EAS
TEST CONDITIONS
TC = 133 °C, rated VR
Rated VR, square wave, 20 kHz, TC = 133 °C
5 μs sine or
Following any rated load ondition
3 μs rect. pulse and with rated VRRM applied
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
2.0 μs, 1.0 kHz
TJ = 25 °C, IAS = 2 A, L = 12 mH
VALUES
10
20
20
850
150
0.5
24
UNITS
A
mJ
Document Number: 94306
Revision: 16-Mar-10
For technical questions, contact: [email protected]
www.vishay.com
1


VS-MBR2090CT-1PbF 데이터시트, 핀배열, 회로
VS-MBRB20...CTPbF, VS-MBR20...CT-1PbF Series
Vishay High Power Products Schottky Rectifier, 2 x 10 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM (1)
Maximum instantaneous
reverse current
IRM (1)
Threshold voltage
Forward slope resistance
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
VF(TO)
rt
CT
LS
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
10 A
20 A
10 A
20 A
TJ = 25 °C
TJ = 125 °C
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
Rated DC voltage
TJ = TJ maximum
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured from top of terminal to mounting plane
Rated VR
VALUES
0.80
0.95
0.70
0.85
0.10
6
0.433
15.8
400
8.0
10 000
UNITS
V
mA
V
mΩ
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case per leg
TJ
TStg
RthJC
DC operation
Typical thermal resistance,
case to heatsink
Maximum thermal resistance,
junction to ambient
RthCS
RthJA
Mounting surface, smooth and greased
DC operation
Approximate weight
Mounting torque
Marking device
minimum
maximum
Non-lubricated threads
Case style D2PAK
Case style TO-262
VALUES
- 65 to 150
- 65 to 175
2.0
UNITS
°C
0.50 °C/W
50
2g
0.07 oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
MBRB20100CT
MBR20100CT-1
www.vishay.com
2
For technical questions, contact: [email protected]
Document Number: 94306
Revision: 16-Mar-10




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VS-MBR2090CT-1PbF

Schottky Rectifier ( Diode ) - Vishay