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SS512B 반도체 회로 부품 판매점

Surface Mount Schottky Barrier Rectifier



LINGXUN 로고
LINGXUN
SS512B 데이터시트, 핀배열, 회로
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200V
Forward Current - 5.0A
FEATURES
Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANICAL DATA
Case: SMB
Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 110mg / 0.004oz
SS52B THRU SS520B
PINNING
PIN DESCRIPTION
1 Cathode
2 Anode
12
Top View
Marking Code: S52B — S520B
Simplified outline SMB and symbol
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Parameter
Symbols SS52B SS54B SS56B SS58B SS510B SS512B S515B SS520B Units
Maximum Repetitive Peak Reverse Voltage
VRRM
20
40
Maximum RMS voltage
VRMS
14
28
Maximum DC Blocking Voltage
VDC 20
40
Maximum Average Forward Rectified Current
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
Max Instantaneous Forward Voltage at 5 A
I F ( AV )
IFSM
VF 0.45 0.55
Maximum DC Reverse Current Ta = 25°C
at Rated DC Reverse Voltage Ta =100°C
Typical Junction Capacitance 1
Typical Thermal Resistance 2
Operating Junction Temperature Range
IR
Cj
RθJA
Tj
800
Storage Temperature Range
Tstg
60 80 100 120 150 200 V
42 56 70 84 105 140 V
60 80 100 120 150 200 V
5.0 A
150 A
0.70
0.85
1.0
50
500
40
-55 ~ +125
-55 ~ +150
V
mA
pF
°C/W
°C
°C
1Measured at 1MHz and applied reverse voltage of 4 V D.C.
2P.C.B. mounted with 0.5 X 0.5" (12.7 X 12.7 mm) copper pad areas.
LX.F2.1.0
http://www.dglxdz.com
PAGE . 1


SS512B 데이터시트, 핀배열, 회로
Fig.1 Forward Current Derating Curve
6.0
100LFM
5.0
4.0
3.0
2.0
1.0
Single phase half wave resistive
or inductive P.C.B mounted on
0.5×0.5"(12.7×12.7mm) pad areas
0.0
25 50 75 100
125
Lead Temperature (°C)
150
Fig.3 Typical Forward Characteristic
20
10
1
0.1
0
SS52BF
SS54BF
SS56BF/SS58BF
SS510BF/SS520BF
0.5 1.0 1.5
Instaneous Forward Voltage (V)
2.0
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
175
150
125
100
75
50
25 8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1 10
Number of Cycles at 60Hz
100
SS52B THRU SS520B
Fig.2 Typical Reverse Characteristics
10 4
10 3
TJ=100°C
10 2
TJ=75°C
101
TJ=25°C
10 0
0
20 40 60 80 100
Percent of Rated Peak Reverse Voltage(%)
Fig.4 Typical Junction Capacitance
1000
500
TJ=25°C
100
20
10
0.1
SS52BF/SS54BF
SS546FB/FS-SS5S2502F0BF
1 10
Reverse Voltage (V)
100
Fig.6- Typical Transient Thermal Impedance
100
10
1
0.01
0.1 1
10
t, Pulse Durationsec
100
LX.F2.1.0
http://www.dglxdz.com
PAGE . 2




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Surface Mount Schottky Barrier Rectifier - LINGXUN