EG1 반도체 회로 부품 판매점
HIGH EFFICIENCY RECTIFIER
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 GALAXY ELECTRICAL |
BL GALAXY ELECTRICAL
HIGH EFFICIENCY RECTIFIER
EG1Y(Z)--- EG1A(Z)
VOLTAGE RANGE: 70--- 600 V
CURRENT: 1.1---0.6 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easilycleaned with freon, alcohol, lsopropand and
similar solvents
MECHANICAL DATA
Case: JEDEC DO-41, molded plastic
Terminals: Axial leads,solderable per MIL-STD-202,
Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces, 0.34 grams
Mounting: Any
DO - 41
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
EG1Y
Maximumpeak repetitive reverse voltage
VRRM
MaximumRMS voltage
VRMS
MaximumDCblocking voltage
VDC
Maximumaverage forward rectified current
9.5mmlead length, @TA=75
Peak forward surge current
IF(AV)
10ms single half-sine-wave
superimplsed on rated load
@TJ=125
Maximuminstantaneous forward voltage
@ IF=IF(AV)
Maximumreverse current
@TA=25
at rated DCblocking voltage
@TA=100
IFSM
VF
IR
Maximumreverse recovery time
(Note1)
trr
Typical junction capacitance
(Note2)
CJ
Typical thermal resistance
Operating junction temperature range
(Note3)
RθJL
TJ
Storage temperature range
TSTG
NOTE: 1.Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MHZ and applied rev erse voltage of 4.0V DC.
3.Thermal resistance junction to ambient.
70
49
70
1.1
30.0
1.2
100.0
500.0
EG1Z
200
140
200
EG1
400
280
400
0.8
15.0
1.7 1.8
50.0
300.0
50
20
60
- 55 ----- + 150
- 55 ----- + 150
EG1A UNITS
600 V
420 V
600 V
0.6 A
10.0 A
2.0
100.0
500.0
15
V
A
ns
pF
www.galaxycn.com
Document Number 0262027
BLGALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
EG1Y(Z) --- EG1A(Z)
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSERECOVERYTIMECHARACTERISTIC
50 10
N 1. N 1.
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE1)
PULSE
GENERATOR
(NOTE2)
NOTES:1.RISETIME= 7ns MAX.INPUTIMPEDANCE=1M . 22pF. JJJJ
2.RISETIME=10ns MAX.SOURCEIMPEDANCE=50 .
+0.5A
0
-0.25A
trr
-1.0A
1cm
SETTIMEBASEFOR10/20 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
EG1Y
1
EG1Z
EG1A
0.1
0.01
EG1
TJ=25
Pulse Width=300µS
0.001
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4
INSTANTANEOUS FORWARDVOLTAGE, VOLTS
FIG.3 -- FORWARD DERATINGCURVE
1.5
1.2 EG 1Y
0.9 EG 1Z,EG 1
EG 1A
0.6
Single Phase
Half W ave 60Hz
Resistive or
Inductive Load
0.3
0
0
25 50 75 100 125 150
AMBIENT TEMPERATURE,
FIG.4 -- PEAK FORWARD SURGECURRENT
30
25
20
15
10
5
0
1
EG1Y
EG1Z,EG1
EG1A
5 10
NUMBER OF CYCLES AT60Hz
50
FIG.5--TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
4
TJ=25
2
EG1A
EG1Y-EG1
1
0.1 0.2 0.4 1 2 4
10 20 40
100
REVERSE VOLTAGE,VOLTS
Document Number 0262027
BLGALAXY ELECTRICAL
www.galaxycn.com
2.
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EG1 rectifier
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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전력반도체 문의 : 010-3582-2743
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