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V40DL45BP 반도체 회로 부품 판매점

Trench MOS Barrier Schottky Rectifier



Vishay 로고
Vishay
V40DL45BP 데이터시트, 핀배열, 회로
www.vishay.com
V40DL45BP
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.26 V at IF = 5 A
TMBS ® eSMP® Series
SMPD
K
1
2
Top View
Bottom View
V40DL45BP
PIN 1
K
PIN 2
HEATSINK
FEATURES
• Trench MOS Schottky technology
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTICS
IF(DC)
40 A
VRRM
45 V
IFSM
VF at IF = 40 A (TA = 125 °C)
TOP max. (AC model)
240 A
0.53 V
150 °C
TJ max. (DC forward current)
200 °C
Package
SMPD
Diode variations
Single die
MECHANICAL DATA
Case: SMPD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum DC forward current (fig. 1)
Peak forward surge current 10 ms single half sine-wave superimposed on
rated load
VRRM
IF(DC) (1)
IFSM
Operating junction temperature range (AC model)
Junction temperature in DC forward current without reverse bias, t = 1 h
TOP
TJ (2)
Note
(1) With heatsink
(2) Meets the requirements of IEC 61215 ed.2 bypass diode thermal test
V40DL45BP
45
40
240
-40 to +150
200
UNIT
V
A
A
°C
°C
Revision: 18-Mar-14
1 Document Number: 87789
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


V40DL45BP 데이터시트, 핀배열, 회로
www.vishay.com
V40DL45BP
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage
Reverse current
IF = 5 A
IF = 20 A
IF = 40 A
IF = 5 A
IF = 20 A
IF = 40 A
VR = 45 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 5 ms
TYP.
0.38
0.47
0.58
0.26
0.38
0.53
-
36
MAX.
-
-
0.66
-
-
0.61
5
125
UNIT
V
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40DL45BP
Typical thermal resistance
RJC
RJA (1)(2)
0.9
45
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA
(2) Free air, without heatsink
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT
(g)
SMPD
V40DL45BP-M3/I
0.55
PACKAGE CODE
I
BASE QUANTITY
DELIVERY MODE
2000/reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
45
40 RthJA=RthJC=0.9oC/W
35
30
25
20
15
RthJA=45oC/W
10
5
0
0 25 50 75 100 125 150
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
28
26
24
22
20
18 D = 0.3
16
14
12
D = 0.2
10 D = 0.1
8
6
4
2
0
0 5 10 15
D = 0.5
20 25
D = 0.8
D = 1.0
T
D = tp/T tp
30 35 40 45
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Revision: 18-Mar-14
2 Document Number: 87789
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




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V40DL45BP

Trench MOS Barrier Schottky Rectifier - Vishay