V8PAL45 반도체 회로 부품 판매점
Surface Mount Trench MOS Barrier Schottky Rectifier
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 Vishay |
www.vishay.com
V8PAL45
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS® SMPATM
Top View
Bottom View
DO-221BC (SMPA)
FEATURES
• Very low profile - typical height of 0.95 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• AEC-Q101 qualified
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
8.0 A
45 V
120 A
VF at IF = 8.0 A (TA = 125 °C)
0.40 V
TJ max.
150 °C
Package
DO-221BC (SMPA)
Diode variation
Single die
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-221BC (SMPA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
VRRM
IF (1)
IF (2)
IFSM
Operating junction and storage temperature range
TJ, TSTG
Notes
(1) Units mounted on 3 cm x 3 cm Aluminum, 2 oz. PCB
(2) Free air, mounted on recommended copper pad area
V8PAL45
8L45
45
8.0
4.0
120
- 40 to + 150
UNIT
V
A
A
°C
Revision: 30-Jul-13
1 Document Number: 87908
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
V8PAL45
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
Reverse current
Typical junction capacitance
IF = 4.0A
IF = 8.0 A
TA = 25 °C
IF = 4.0 A
IF = 8.0 A
TA = 125 °C
VR = 45 V
TA = 25 °C
TA = 125 °C
4.0 V, 1 MHz
VF (1)
IR (2)
CJ
0.43
0.49
0.32
0.40
-
11
1400
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 5 ms
MAX.
-
0.57
-
0.48
1850
30
-
UNIT
V
μA
mA
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
V8PAL45
Typical thermal resistance
RJA (1)
RJM (2)
100
5
Notes
(1) Free air, mounted on recommended PCB, 2 oz. pad area; thermal resistance RJA - junction to ambient
(2) Units mounted on 3 cm x 3 cm Aluminum, 2 oz. pad area; thermal resistance RJM - junction to mount
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
V8PAL45-M3/I
V8PAL45HM3/I (1)
UNIT WEIGHT (g)
0.032
0.032
PREFERRED PACKAGE CODE
I
I
Note
(1) AEC-Q101 qualified
BASE QUANTITY
14 000
14 000
DELIVERY MODE
13" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
9
TM = 132 °C, RthJM = 5 °C/W
8
7
6
5
TA = 25 °C
4
3
2
1 TM measured at cathode band
terminal PCB mount
0
0 25 50 75 100
125
Mount Temperature (°C)
150
Fig. 1 - Maximum Forward Currernt Derating Curve
4.5
D = 0.8
4 D = 0.5
D = 0.3
3.5
D = 0.2
3
D = 1.0
2.5 D = 0.1
2
1.5
T
1
0.5
D = tp/T
tp
0
0 1 2 3 4 5 6 7 8 9 10
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Revision: 30-Jul-13
2 Document Number: 87908
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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