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VS-10CSH01HM3 반도체 회로 부품 판매점

Hyperfast Rectifier



Vishay 로고
Vishay
VS-10CSH01HM3 데이터시트, 핀배열, 회로
www.vishay.com
VS-10CSH01HM3
Vishay Semiconductors
Hyperfast Rectifier, 2 x 5 A FRED Pt®
K
1
2
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
FEATURES
• Hyperfast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr (typ.)
TJ max.
Diode variation
TO-277A (SMPC)
2x5A
100 V
0.98 V
25 ns
175 °C
Dual die
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in snubber, boost,
lighting, piezo-injection, as high frequency rectifiers, and
freewheeling diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
per device
per diode
Non-repetitive peak surge current
per device
per diode
Operating junction and storage temperatures
SYMBOL
VRRM
IF(AV)
IFSM
TJ, TStg
TEST CONDITIONS
TSp = 155 °C
TJ = 25 °C
VALUES
100
10
5
130
70
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
100
Forward voltage, per diode
IF = 5 A
VF
IF = 5 A, TJ = 150 °C
-
-
Reverse leakage current, per diode
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
-
-
Junction capacitance
CT VR = 100 V
-
TYP.
-
0.92
0.75
-
4
18
MAX.
-
0.98
0.82
2
80
-
UNITS
V
μA
pF
Revision: 26-Nov-14
1 Document Number: 94995
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


VS-10CSH01HM3 데이터시트, 핀배열, 회로
www.vishay.com
VS-10CSH01HM3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
trr
IRRM
Qrr
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
IF = 5 A
dIF/dt = 200 A/μs
VR = 160 V
TJ = 125 °C
-
-
-
-
-
-
-
-
25
-
18
28
2
3.8
18
53
MAX.
-
25
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
Thermal resistance, junction
to solder pad, per diode
TJ, TStg
RthJ-Sp
Approximate weight
Marking device
Case style TO-277A (SMPC)
MIN.
-65
-
TYP.
-
MAX.
175
2.5 3.5
0.1
0.0035
SCH1
UNITS
°C
°C/W
g
oz.
100
10
TJ = 175 °C
1
0.1
0.2
TJ = 150°C
TJ = 125°C
TJ = 25 °C
0.4 0.6 0.8 1.0 1.2 1.4
VF - Forward Voltage Drop (V)
1.6
Fig. 1 - Typical Forward Voltage Drop Characteristics
100
175 °C
10
150 °C
1
125 °C
0.1
0.01
0.001
25 °C
0.0001
0
25 50 75 100
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 26-Nov-14
2 Document Number: 94995
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




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