파트넘버.co.kr V8P12 데이터시트 PDF


V8P12 반도체 회로 부품 판매점

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier



Vishay 로고
Vishay
V8P12 데이터시트, 핀배열, 회로
www.vishay.com
V8P12
Vishay General Semiconductor
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.53 V at IF = 4 A
TMBS® eSMP® Series
K
1
2
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
FEATURES
• Very low profile - typical height of 1.1 mm
Available
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
EAS
VF at IF = 8.0 A
TJ max.
Package
8.0 A
120 V
140 A
100 mJ
0.63 V
150 °C
TO-277A (SMPC)
Diode variations
Single die
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters and polarity protection
applications.
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant and
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV)
IFSM
Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C
Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C
Operating junction and storage temperature range
EAS
IRRM
TJ, TSTG
V8P12
V812
120
8.0
140
100
0.5
-40 to +150
UNIT
V
A
A
mJ
A
°C
Revision: 16-Dec-14
1 Document Number: 89170
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


V8P12 데이터시트, 핀배열, 회로
www.vishay.com
V8P12
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage
IR = 1.0 mA
IF = 4 A
IF = 8 A
IF = 4 A
IF = 8 A
Reverse current
VR = 90 V
VR = 120 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR
VF (1)
IR (2)
120 (minimum)
0.59
0.77
0.53
0.63
5
3
15
6
MAX.
-
-
0.84
-
0.71
-
-
300
20
UNIT
V
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
RJA (1)
RJL
Note
(1) Units mounted on recommended PCB 1 oz. pad layout
V8P12
60
4
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
V8P12-M3/86A
0.10
86A
V8P12-M3/87A
V8P12HM3/86A (1)
V8P12HM3/87A (1)
V8P12HM3_A/H (1)
V8P12HM3_A/I (1)
0.10
0.10
0.10
0.10
0.10
87A
86A
87A
H
I
Note
(1) AEC-Q101 qualified
BASE QUANTITY
1500
6500
1500
6500
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Revision: 16-Dec-14
2 Document Number: 89170
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




PDF 파일 내의 페이지 : 총 5 페이지

제조업체: Vishay

( vishay )

V8P12 rectifier

데이터시트 다운로드
:

[ V8P12.PDF ]

[ V8P12 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


V8P10

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier - Vishay



V8P12

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier - Vishay



V8P15

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier - Vishay