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Vishay |
VS-12CWQ06FNPbF
Vishay Semiconductors
Schottky Rectifier, 2 x 6 A
Base
common
cathode
4
D-PAK (TO-252AA)
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM
TJ max.
Diode variation
EAS
2
Common
cathode
13
Anode
Anode
D-PAK (TO-252AA)
2x6A
60 V
0.57 V
35 mA at 125 °C
150 °C
Common cathode
7 mJ
FEATURES
• Popular D-PAK outline
• Center tap configuration
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION
The VS-12CWQ06FNPbF surface mount, center tap,
Schottky rectifier series has been designed for applications
requiring low forward drop and small foot prints on PC
board. Typical applications are in disk drives, switching
power supplies, converters, freewheeling diodes, battery
charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
Rectangular waveform
IFSM
tp = 5 μs sine
VF 6 Apk, TJ = 125 °C (per leg)
TJ Range
VALUES
12
60
320
0.57
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-12CWQ06FNPbF
60
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
See fig. 5
per leg
per device
IF(AV)
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
Non-repetitive avalanche energy per leg
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 131 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated VRRM applied
TJ = 25 °C, IAS = 1.2 A, L = 10 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
6
12
320
105
7
0.8
UNITS
A
A
mJ
A
Document Number: 94134 For technical questions within your region, please contact one of the following:
Revision: 14-Jan-11
www.vishay.com
1
VS-12CWQ06FNPbF
Vishay Semiconductors
Schottky Rectifier, 2 x 6 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward
voltage drop per leg
See fig. 1
VFM (1)
Maximum reverse
leakage current per leg
See fig. 2
IRM (1)
Threshold voltage
Forward slope resistance
Typical junction capacitance per leg
Typical series inductance per leg
VF(TO)
rt
CT
LS
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
6A
12 A
6A
12 A
TJ = 25 °C
TJ = 125 °C
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
TJ = TJ maximum
VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
VALUES
0.61
0.79
0.57
0.72
3
35
0.36
24.14
360
5.0
UNITS
V
mA
V
m
pF
nH
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to case
per leg
per device
RthJC
DC operation
See fig. 4
Approximate weight
Marking device
Case style D-PAK (similar to TO-252AA)
Note
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
VALUES
UNITS
- 55 to 150
°C
3.0
°C/W
1.5
0.3 g
0.01 oz.
12CWQ06FN
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 94134
Revision: 14-Jan-11
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