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ES1A 반도체 회로 부품 판매점

Superfast Efficient SMD Rectifier Diodes



Diotec 로고
Diotec
ES1A 데이터시트, 핀배열, 회로
ES1A ... ES1J
ES1A ... ES1J
Superfast Efficient SMD Rectifier Diodes
Superschnelle SMD-Gleichrichter für hohen Wirkungsgrad
IFAV = 1 A
VF1 < 0.92 V
Tjmax = 150°C
VRRM = 50...600 V
IFSM = 30/33 A
trr < 15...35 ns
Version 2015-10-22
~ SMA / ~ DO-214AC
5± 0.2
Typical Applications
Rectification of higher frequencies
High efficient switching stages
Commercial grade 1)
Typische Anwendungen
Gleichrichtung hoher Frequenzen
Wandlerstufen mit hohem Wirkungsgrad
Standardausführung 1)
1± 0.3
0.15
Features
Extremely low reverse recovery time
Low forward voltage drop
Compliant to RoHS, REACH,
Conflict Minerals 1)
RoHS
Pb
Besonderheiten
Extrem niedrige Sperrverzugszeit
Niedrige Fluss-Spannung
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Type Mechanical Data 1)
Mechanische Daten 1)
Typ
Taped and reeled
7500 / 13“
Gegurtet auf Rolle
4.5± 0.3
Dimensions - Maße [mm]
Weight approx.
Case material
Solder & assembly conditions
0.07 g
UL 94V-0
260°C/10s
Gewicht ca.
Gehäusematerial
Löt- und Einbaubedingungen
MSL = 1
Maximum ratings and Characteristics 2)
Type
Typ
ES1A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
50
ES1B
100
ES1C
150
ES1D
200
ES1F
300
ES1G
400
ES1J
600
Grenz- und Kennwerte 2)
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
50
100
150
200
300
400
600
Max. average forward rectified current – Dauergrenzstrom in Einwegschaltung
Repetitive peak forward current – Periodischer Spitzenstrom
Peak forward surge current (half sine) – Stoßstrom (Sinushalbw.) 50/60 Hz
Rating for fusing, t < 10 ms – Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to terminal
Wärmewiderstand Sperrschicht – Anschluss
Typ. junction capacitance – Typ. Sperrschichtkapazitat
TT = 100°C
f > 15 Hz
TA = 25°C
TA = 25°C
VR = 4 V
IFAV 1 A
IFRM 6 A 3)
IFSM 30/33 A
i2t 4.5 A2s
Tj -50...+150°C
TS -50...+150°C
RthA < 70 K/W 4)
RthT < 30 K/W
Cj 10 pF
1 Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2 Tj = 25°C unless otherwise specified – Tj = 25°C wenn nicht anders angegeben
3 Max. temperature of the terminals TT = 100°C – Max. Temperatur der Anschlüsse TT = 100°C
4 Mounted on P.C. board with 25 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
1


ES1A 데이터시트, 핀배열, 회로
Characteristics
Type
Typ
ES1A...ES1D
ES1F...ES1G
ES1J
Leakage current
Sperrstrom
Reverse recovery time
Sperrverzugszeit
trr [ns] 1)
< 15
< 25
< 35
ES1A ... ES1J
Kennwerte
Forward voltage
Durchlass-Spannung
VF [V]
at / bei
IF [A]
< 0.92
1
< 1.3
1
< 1.7
1
Tj = 25°C
Tj = 100°C
VR = VRRM
VR = VRRM
IR
IR
< 5 µA
< 100 µA
120
[%]
100
80
60
40
20
IFAV
0
0 TA 50 100 150 [°C]
Rated forward current versus ambient temperature1)
Zul. Richtstrom in Abh. von der Umgebungstemp.1)
10
[µA]
1
Tj = 125°C
Tj = 85°C
Tj = 25°C
10
[A]
ES1A...D
1
0.1
ES1F...G
ES1J
10-2
IF
10-3
Tj = 25°C
VF [V]
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
[pF]
Tj = 25°C
f = 1.0 MHz
10-1
10-2
IR
10-3
0
VRRM 40 60 [%] 100
Typ. instantaneous leakage current vs. rev. voltage
Typ. Sperrstrom (Augenblickswert) ü. Sperrspannung
Cj
VR [V]
Junction capacitance vs. reverse voltage (typical)
Sperrschichtkapazität in Abh. v.d. Sperrspg. (typ.)
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1 IF = 0.5 A through/über IR = 1 A to/auf IR = 0.25 A
2 http://www.diotec.com/
© Diotec Semiconductor AG




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