VS-10MQ100-M3 반도체 회로 부품 판매점
Schottky Rectifier ( Diode )
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 Vishay |
www.vishay.com
VS-10MQ100-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 1 A
Cathode
Anode
DO-214AC (SMA)
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM
TJ max.
Diode variation
EAS
DO-214AC (SMA)
1A
100 V
0.63 V
1 mA at 125 °C
150 °C
Single die
1.0 mJ
FEATURES
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• Small foot print, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-10MQ100-M3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
Rectangular waveform
IFSM
tp = 5 μs sine
VF 1.5 Apk, TJ = 125 °C
TJ Range
VALUES
1
100
120
0.68
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
Maximum working peak reverse voltage VRWM
VS-10MQ100-M3
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 4
IF(AV)
Maximum peak one cycle
non-repetitive surge current, TJ = 25 °C
See fig. 6
Non-repetitive avalanche energy
Repetitive avalanche current
IFSM
EAS
IAR
TEST CONDITIONS
50 % duty cycle at TL = 126 °C, rectangular waveform
On PC board 9 mm2 island
(0.013 mm thick copper pad area)
50 % duty cycle at TL = 135 °C, rectangular waveform
On PC board 9 mm2 island
(0.013 mm thick copper pad area)
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated VRRM applied
TJ = 25 °C, IAS = 0.5 A, L = 8 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
1.5
1
120
30
1.0
0.5
UNITS
A
mJ
A
Revision: 20-Jan-15
1 Document Number: 93365
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-10MQ100-M3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
IRM
Threshold voltage
Forward slope resistance
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
VF(TO)
rt
CT
LS
dV/dt
Note
(1) Pulse width = 300 μs, duty cycle = 2 %
1A
1.5 A
1A
1.5 A
TJ = 25 °C
TJ = 125 °C
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
TJ = TJ maximum
VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.78
0.85
0.63
0.68
0.1
1
0.52
78.4
38
2.0
10 000
UNITS
V
mA
V
m
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to ambient
RthJA
DC operation
Approximate weight
Marking device
Case style SMA (similar D-64)
Note
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
VALUES
-55 to +150
UNITS
°C
80 °C/W
0.07
0.002
1J
g
oz.
Revision: 20-Jan-15
2 Document Number: 93365
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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VS-10MQ100-M3 rectifier
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