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VS-10TQ035PbF 반도체 회로 부품 판매점

Schottky Rectifier ( Diode )



Vishay 로고
Vishay
VS-10TQ035PbF 데이터시트, 핀배열, 회로
www.vishay.com
VS-10TQ...PbF Series, VS-10TQ...-N3 Series
Vishay Semiconductors
Schottky Rectifier, 10 A
Base
cathode
2
TO-220AC
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM
TJ max.
Diode variation
EAS
13
Cathode Anode
TO-220AC
10 A
35 V, 40 V, 45 V
0.49 V
15 mA at 125 °C
175 °C
Single die
13 mJ
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-10TQ... Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
Rectangular waveform
tp = 5 μs sine
VF 10 Apk, TJ = 125 °C
TJ Range
VALUES
10
35/45
1050
0.49
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-
10TQ035PbF
VS-
10TQ035-N3
VS-
10TQ040PbF
VS-
10TQ040-N3
VS-
10TQ045PbF
VS-
10TQ045-N3
UNITS
Maximum DC reverse voltage
VR
Maximum working peak
35 35 40 40 45 45 V
reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle non-repetitive
surge current
See fig. 7
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
VALUES
50 % duty cycle at TC = 151 °C, rectangular waveform
10
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
10 ms sine or 6 ms rect. pulse VRRM applied
TJ = 25 °C, IAS = 2 A, L = 6.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1050
280
13
2
UNITS
A
mJ
A
Revision: 11-Oct-11
1 Document Number: 94120
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


VS-10TQ035PbF 데이터시트, 핀배열, 회로
www.vishay.com
VS-10TQ...PbF Series, VS-10TQ...-N3 Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
IRM (1)
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
CT
LS
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
10 A
20 A
TJ = 25 °C
10 A
20 A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.57
0.67
0.49
0.61
2
15
900
8.0
10 000
UNITS
V
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
See fig. 4
Typical thermal resistance,
case to heatsink
RthCS Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style TO-220AC
VALUES
- 55 to 175
UNITS
°C
2.0
°C/W
0.50
2g
0.07 oz.
6 (5)
12 (10)
kgf · cm
(lbf ·in)
10TQ035
10TQ045
Revision: 11-Oct-11
2 Document Number: 94120
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




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Schottky Rectifier ( Diode ) - Vishay