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VS-10BQ060PbF
Vishay Semiconductors
High Performance Schottky Rectifier, 1.0 A
Cathode
Anode
SMB
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM
TJ max.
Diode variation
EAS
SMB
1.0 A
60 V
0.6 V
5.0 mA at 125 °C
150 °C
Single die
2.0 mJ
FEATURES
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-10BQ060PbF surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
1.0 Apk, TJ = 125 °C
Range
VALUES
1.0
60
700
0.57
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-10BQ060PbF
60
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TEST CONDITIONS
50 % duty cycle at TL = 103 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated VRRM applied
TJ = 25 °C, IAS = 1 A, L = 4 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
1.0
700
42
2.0
1.0
UNITS
A
A
mJ
A
Revision: 03-Jun-14
1 Document Number: 94113
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-10BQ060PbF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
IRM (1)
Typical junction capacitance
Typical series inductance
Maximum voltage rate of charge
CT
LS
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
1A
TJ = 25 °C
2A
1A
TJ = 125 °C
2A
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.6
0.76
0.57
0.69
0.1
5.0
62
2.0
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
TJ (1), TStg
RthJL (2)
DC operation
RthJA
Approximate weight
Marking device
Case style SMB (similar DO-214AA)
Notes
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
(2) Mounted 1" square PCB
VALUES
-55 to +150
UNITS
°C
36
°C/W
80
0.10
0.003
V1H
g
oz.
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
0.1
0.2 0.4 0.6 0.8 1.0
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
1
0.1
0.01
0.001
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0.0001
0
10 20 30 40 50 60
VR - Reverse Voltage (V)
Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage
Revision: 03-Jun-14
2 Document Number: 94113
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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