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U60D20D 반도체 회로 부품 판매점

60 Amperes Dual Doubler Ultra Fast Recovery Half Bridge Rectifiers



Thinki Semiconductor 로고
Thinki Semiconductor
U60D20D 데이터시트, 핀배열, 회로
U60D20D thru U60D60D
®
U60D20D thru U60D60D
Pb
Pb Free Plating Product
60 Amperes Dual Doubler Ultra Fast Recovery Half Bridge Rectifiers
Features
Dual rectifier construction, positive center-tap
Plastic package has Underwriters Laboratory
Flammability Classification 94V0
Glass passivated chip junctions
Superfast recovery time, high voltage
Low forward voltage, high current capability
Low thermal resistance
Low power loss, high efficiency
High temperature soldering guaranteed:
260oC, 0.16”(4.06mm)from case for 10 seconds
Mechanical Data
Cases: TO-3P/TO-247AD molded plastic
Terminals: Pure tin plated, lead free solderable per
MIL-STD-750. Method 2026
Polarity: As marked on diode body
Mounting position: Any
Mounting torque: 10in-lbs. Max.
Weight: 6.5 gram approximately
TO-3P/TO-247AD
.142(3.6)
.125(3.2)
.640(16.25)
.620(15.75)
Unit: inch (mm)
.199(5.05)
.175(4.45)
.126(3.2)
.110(2.8)
.050(1.25)
.045(1.15)
.225(5.7)
.204(5.2)
.225(5.7)
.204(5.2)
.095(2.4)
.030(0.75)
.017(0.45)
Case
Case
Case
Case
Positive
Negative
Doubler
Reverse Doubler
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "C"
Suffix "A"
Suffix "D"
Suffix "S"
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (Rated VR)
Per Leg
Per Device
Peak Rectified Forward Current, Per Leg
(Rated VR, Square Wave, 20 kHz, TC = 150°C)
Nonrepetitive Peak Surge Current (Surge applied at rated
load conditions, halfwave, single phase, 60 Hz) Per Leg
Operating Junction and Storage Temperature
THERMAL CHARACTERISTICS (Per Diode Leg)
Symbol
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
TJ, Tstg
U60D20D U60D40D U60D60D
200 400
600
30 @ TC = 150°C
60 @ TC = 150°C
60 @ TC = 150°C
60 @ TC =145°C
600
− 65 to +175
Unit
V
A
A
A
°C
Maximum Thermal Resistance,
− Junction−to−Case
− Junction−to−Ambient
RqJC
RqJA
°C/W
1.5
40
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 30 Amp, TC = 150°C)
(IF = 30 Amp, TC = 25°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TJ = 150°C)
(Rated DC Voltage, TJ = 25°C)
Maximum Reverse Recovery Time
(iF = 1.0 A, di/dt = 50 A/ms)
VF
0.95
1.05
1.20
1.30
iR
5000
60
1.5
1.7
5000
60
V
mA
trr 35
50 ns
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/


U60D20D 데이터시트, 핀배열, 회로
U60D20D thru U60D60D
®
Ultra Fast Recovery Diodes
120
A
100
IF 80
60
40
20
TVJ=150°C
TVJ=100°C
TVJ= 25°C
0.8
uC
Qr
0.6
TVJ= 100°C
VR = 100V
IF= 15A
0.4 IF= 30A
IF= 70A
0.2
30
A
25
IRM
20
TVJ= 100°C
VR = 100V
IF= 15A
I = 30A
F
I = 70A
F
15
10
5
0
0.0 0.4 0.8 1.2 V
VF
Fig. 1 Forward current I versus V
FF
1.6
1.4
Kf
1.2
1.0
0.8 IRM
0.6
Q
r
0.4
0
40 80 120 °C 160
TVJ
Fig. 4 Dynamic parameters Q , I
r RM
versus TVJ
1.2
K/W
1.0
0.0
10 100 A/us 1000
-diF/dt
Fig. 2 Typ. reverse recovery charge Q
r
versus -diF/dt
0
0 200 400 600 A8/0u0s 1000
-diF/dt
Fig. 3 Typ. peak reverse current I
RM
versus -diF/dt
70
ns
60
trr 50
40
30
20
10
TVJ= 100°C
VR = 100V
IF= 15A
IF= 30A
IF= 70A
6
V
5
VFR
4
tfr
3
2
1
TVJ= 100°C
IF = 30A
VFR
1.8
us
1.5
tfr
1.2
0.9
0.6
0.3
0
0 200 400 600 A8/0u0s
-diF/dt
Fig. 5 Typ. recovery time t
rr
versus -diF/dt
1000
0 0.0
0 200 400 600 A8/u0s0
diF/dt
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF/dt
0.8
ZthJC
0.6
0.4
0.2
0.0
0.001
0.01
0.1
1s
t
Fig. 7 Transient thermal impedance junction to case
10
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/




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