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SFF1606GD 반도체 회로 부품 판매점

16 Ampere Insulated Tandem Polarity Super Fast Recovery Half Bridge Rectifier



Thinki Semiconductor 로고
Thinki Semiconductor
SFF1606GD 데이터시트, 핀배열, 회로
SFF1604GD thru SFF1608GD
®
SFF1604GD/SFF1606GD/SFF1608GD
Pb
Pb Free Plating Product
16 Ampere Insulated Tandem Polarity Super Fast Recovery Half Bridge Rectifier
Features
Latest GPP technology with super fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
ITO-220AB
Unit:mm
Mechanical Data
Case: Fully Insulated TO-220FP FullPak Plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.1 gram approximately
Case
Case
Case
Case
Positive
Negative
Doubler Series Connection
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "G"
Suffix "GA"
Suffix "GD"
Suffix "GS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL SFF1604GD SFF1606GD SFF1608GD UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=100oC
VRRM
VRMS
VDC
IF(AV)
200
140
200
400
280
400
16.0
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
175
150
Maximum Instantaneous Forward Voltage
@ 8.0 A
VF
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
CJ
Typical Thermal Resistance (Note 3)
R JC
Operating Junction and Storage
Temperature Range
TJ, TSTG
0.98
1.3
5.0
250
35
90
2.2
-55 to + 150
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
600 V
420 V
600 V
A
A
1.7 V
uA
uA
nS
pF
oC/W
oC
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/


SFF1606GD 데이터시트, 핀배열, 회로
SFF1604GD thru SFF1608GD
®
FIG.1 - FORWARD CURRENT DERATING CURVE
16
13
10
8
6
4
60 Hz Resistive or
Inductive load
0
0 50
100
CASE TEMPERATURE, oC
150
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
80
SFF1604GD
SFF1606GD
8.0
SFF1608GD
0.1
0.01
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
200
175
150
125
100
75
50
25
0
1
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
10 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
TJ=125oC
100
10
TJ=25oC
1
0.1
0
20 40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0 4.0 10
REVERSE VOLTAGE, VOLTS
100
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/2
http://www.thinkisemi.com/




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