파트넘버.co.kr DZ1100N22K 데이터시트 PDF


DZ1100N22K 반도체 회로 부품 판매점

Rectifier Diode Module



Infineon 로고
Infineon
DZ1100N22K 데이터시트, 핀배열, 회로
Netz-Dioden-Modul
Rectifier Diode Module
Technische Information /
technical information
DZ1100N22K
Key Parameters
VDRM / VRRM
IFAVM
IFSM
vT0
rT
RthJC
Baseplate
Weight
2200 V
1100 A (TC=100°C)
34857000A0 A(TC=55°C)
0,75 V
0,073 mΩ
0,0466 K/W
70 mm
1950 g
Merkmale
Druckkontakt- Technologie für hohe
Verlässlichkeit
Industrie-Standard-Gehäuse
Elektrisch isolierte Grundplatte
Advanced medium power technology
Typische Anwendungen
Gleichrichter für Antriebsapplikationen
Gleichricher für UPS
Batterieladegleichrichter
For type designation please refer to actual
shortform catalog
http://www.ifbip.com/catalog
Features
Pressure contact technology for high reliability
Industial standard package
Electrically insulated baseplate
Advanced medium power technology
Typical Applications
Rectifier for Drives Applications
Rectifiers for UPS
Battery chargers
content of customer DMX code DMX code DMX code
digit digit quantity
serial number
1..7 7
SP material number
8..16
9
datecode (production day)
17..18
2
datecode (production year)
19..20
2
datecode (production month) 21..22
2
vT class
23..26
4
QR class
27..30
4
Date of Publication 2014-04-10
Revision 3.1
www.ifbip.com
Seite/page 1/10


DZ1100N22K 데이터시트, 핀배열, 회로
Netz-Dioden-Modul
Rectifier Diode Module
Technische Information /
technical information
DZ1100N22K
DZ1100N22K
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltages
Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Tvj = -40°C... Tvj max
Tvj = +25°C... Tvj max
TC = 100°C
Tvj = 25°C, tP = 10ms
Tvj = Tvj max, tP = 10ms
Tvj = 25°C, tP = 10ms
Tvj = Tvj max, tP = 10ms
VRRM
VRSM
IFRMSM
IFAVM
IFSM
I²t
2200 V
2300 V
1800 A
1100 A
48000 A
40000 A
11520000 A²s
8000000 A²s
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Sperrstrom
reverse current
Isolations-Prüfspannung
insulation test voltage
Tvj = Tvj max , iF = 3000A
Tvj = Tvj max
Tvj = Tvj max
Tvj = Tvj max , vR = VRRM
RMS, f = 50Hz, t = 1 sec
RMS, f = 50Hz, t = 1 min
vF
V(TO)
rT
iR
VISOL
max. 1,11 V
max. 0,75 V
max. 0,073 mΩ
max.
80 mA
3,6 kV
3 kV
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Modul / per Module, Θ = 180° sin RthJC
pro Modul / per Module, DC
max.
max.
0,0480 K/W
0,0466 K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
pro Modul / per Module
pro Zweig / per arm
RthCH
Tvj max
Tc op
Tstg
max.
0,015 K/W
150 °C
- 40...+150 °C
- 40...+150 °C
prepared by: CD
approved by: ML
Date of Publication 2014-04-10
date of publication: 2014-04-10
revision:
3.1
Revision 3.1
Seite/page 2/10




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DZ1100N22K rectifier

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Rectifier Diode Module - Infineon